The Characteristic of Connecting Layer Material on TeO2 Crystal Surface by Thermal Stress Method

FU Xiu-hua; PAN Yong-gang; DONG Jun; LIU Dong-mei; ZHANG Jing

doi:10.3788/gzxb20164501.0131001

Journals >Acta Photonica Sinica >Volume 45 >Issue 1 >Page 131001 > Article

Acta Photonica Sinica
Vol. 45, Issue 1, 131001 (2016)

The Characteristic of Connecting Layer Material on TeO2 Crystal Surface by Thermal Stress Method

FU Xiu-hua^1、*, PAN Yong-gang¹, DONG Jun², LIU Dong-mei¹, and ZHANG Jing¹

Author Affiliations

¹[in Chinese]

²[in Chinese]

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DOI: 10.3788/gzxb20164501.0131001 Cite this Article

FU Xiu-hua, PAN Yong-gang, DONG Jun, LIU Dong-mei, ZHANG Jing. The Characteristic of Connecting Layer Material on TeO2 Crystal Surface by Thermal Stress Method[J]. Acta Photonica Sinica, 2016, 45(1): 131001 Copy Citation Text

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References

[2] CHUNG H, AMOILD M A. Near-infrared spectroscopy for monitoring starch hydrolysis［J］. Applied Spectroscopy, 2000, 54: 277-283 .

[3] AHMED M M, HOGARTH C A, KHAN M N. A study of GeO2-TeO2 glass system［J］. Journal of Materials Science, 1984, 19(2): 4040-4044.

[7] HSUEH C H.Thermal stress in elastic multilayer systems［J］. Thin Solid Film, 2002, 418: 182-188.

[13] MOORE T D, JARVIS J L. The peeling moment-a key rule for delamination resistance in IC assemblies.ASME ［J］. Electron packaging 2004, 126(1): 106-109.

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