• Optoelectronics Letters
  • Vol. 15, Issue 2, 104 (2019)
Jing-yi CHEN1, Sen YAN1, Rui-lin ZHENG1, Liao-lin ZHANG2, Hai-tao GUO3, and Chun-xiao LIU1、*
Author Affiliations
  • 1College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
  • 2School of Material Science and Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, China
  • 3State Key Laboratory of Transient Optics and Photonics, Xi′an Institute of Optics and Precision Mechanics, Chi-nese Academy of Sciences, Xi′an 710119, China
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    DOI: 10.1007/s11801-019-8103-8 Cite this Article
    CHEN Jing-yi, YAN Sen, ZHENG Rui-lin, ZHANG Liao-lin, GUO Hai-tao, LIU Chun-xiao. Optical properties of an Er3+-doped phosphate glasswaveguide formed by single-energy H+ ion implantation[J]. Optoelectronics Letters, 2019, 15(2): 104 Copy Citation Text show less

    Abstract

    In this work, we report the fabrication of an optical waveguide by single-energy H+ ion implantation in the Er3+-doped phosphate glass. The ion implantation conditions are with energy of 0.4 MeV and a fluence of 8.0×1016 ions/cm2. The dark mode spectrum of the waveguide structure was measured by the prism coupling experiment. The refractive index change along with the penetration depth was fitted by using the reflectivity calculation method (RCM). Finally, the calculated near-field light intensity distribution shows superior waveguide properties, which demonstrates its promis-ing potentials for compact optical integrated devices.
    CHEN Jing-yi, YAN Sen, ZHENG Rui-lin, ZHANG Liao-lin, GUO Hai-tao, LIU Chun-xiao. Optical properties of an Er3+-doped phosphate glasswaveguide formed by single-energy H+ ion implantation[J]. Optoelectronics Letters, 2019, 15(2): 104
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