• Chinese Optics Letters
  • Vol. 4, Issue 7, 416 (2006)
Ting Wang*, Xia Guo, Yuan Fang, Bin Liu, and Guangdi Shen
Author Affiliations
  • Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022
  • show less
    DOI: Cite this Article Set citation alerts
    Ting Wang, Xia Guo, Yuan Fang, Bin Liu, Guangdi Shen. Integration of GaN thin films with silicon substrates by fusion bonding and laser lift-off[J]. Chinese Optics Letters, 2006, 4(7): 416 Copy Citation Text show less
    References

    [1] S. N. Mohammad, A. A. Salvador, and H. Morkoc, IEEE Proc. 83, 1306 (1995).

    [2] M. Koike, N. Shibata, H. Kato, and Y. Takahashi, IEEE J. Sel. Top. Quantum Electron. 8, 271 (2002).

    [3] A. Sakai, H. Sunakawa, and A. Usui, Appl. Phys. Lett. 71, 2259 (1997).

    [4] T. Egawa, H. Ohmura, H. Ishikawa, and T. Jimbo, Appl. Phys. Lett. 81, 292 (2002).

    [5] X. Q. Shen, H. Matsuhata, and H. Okumura, Appl. Phys. Lett. 86, 021912 (2005).

    [6] Y.-J. Lin, Appl. Phys. Lett. 84, 2760 (2004).

    [7] S.-R. Jeon, M. S. Cho, M.-A. Yu, and G. M. Yang, IEEE J. Sel. Top. Quantum Electron. 8, 739 (2002).

    [8] T. Nishida, H. Saito, and N. Kobayashi, Appl. Phys. Lett. 79, 711 (2001).

    [9] H. Kim, H. Yang, C. Huh, S.-W. Kim, S. J. Park, and H. Hwang, Electron. Lett. 36, 908 (2000).

    [10] M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, and H. Angerer, Appl. Phys. Lett. 69, 1749 (1996).

    [11] W. S. Wong, T. Sands, and N. W. Cheung, Appl. Phys. Lett. 72, 599 (1997).

    [12] Z.-L. Li, X.-D. Hu, B. Zhang, K. Chen, R.-J. Nie, and G.-Y. Zhang, Laser Technique 28, 29 (2004).

    [13] T. Bret, V. Wagner, D. Martin, P. Hoffmann, and M. Ilegems, Phys. Stat. Sol. (a) 194, 559 (2002).

    [14] W. S. Wong, A. B. Wengrow, Y. Cho, A. Salleo, N. J. Quitoriano, N.-W. Cheldng, and T. Sands, J. Electron. Mater. 28, 1409 (1999).

    [15] C.-F. Chu, F.-I. Lai, J.-T. Chu, C.-C. Yu, C.-F. Lin, H.-C. Kuo, and S. C. Wang, J. Appl. Phys. 95, 3916 (2004).

    [16] Y.-H. Xiang, Y.-S. Shan, K. Gong, X.-Z. Tan, Z.-X. Gao, H. Dai, and N.-Y. Wang, Atomic Energy Science and Technology (in Chinese) 37, 101 (2003).

    [17] T. Wang, X. Guo, B. Liu, N.-H. Niu, W.-L. Guo, and G.-D. Shen, Chin. J. Laser (in Chinese) 32, 1295 (2005).

    [18] J.-H. Hu, J.-S. Zhu, Y.-C. Feng, J.-B. Zhang, Z.-H. Li, B.-P. Guo, and X.-S. Xu, Chin. J. Luminescence (in Chinese) 26, 518 (2005).

    [19] R. Windisch, C. Rooman, S. Meinlschmidt, P. Kiesel, D. Zipperer, G. H. Dohler, B. Dutta, M. Kuijk, G. Borghs, and P. Heremans, Appl. Phys. Lett. 79, 2315 (2001).

    [20] C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. W. Ager III, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, Phys. Rev. B 54, 17745 (1996).

    CLP Journals

    [1] Tingting Jia, Shengming Zhou, Hui Lin, Hao Teng, Xiaorui Hou, Jianqi Liu, Jun Huang, Min Zhang, Jianfeng Wang, Ke Xu. Characteristics of the crystalline and luminescence properties of a-plane GaN films grown on \gamma-LiAlO2 (302) substrates[J]. Chinese Optics Letters, 2011, 9(9): 093101

    Ting Wang, Xia Guo, Yuan Fang, Bin Liu, Guangdi Shen. Integration of GaN thin films with silicon substrates by fusion bonding and laser lift-off[J]. Chinese Optics Letters, 2006, 4(7): 416
    Download Citation