• Chinese Journal of Lasers
  • Vol. 12, Issue 11, 664 (1985)
Shen Feng1, Xie Jingshan1, and Guo Changzhi2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    Shen Feng, Xie Jingshan, Guo Changzhi. Longitudinal-mode behavior of stripe-geometry semiconductor lasers with a very long cavity[J]. Chinese Journal of Lasers, 1985, 12(11): 664 Copy Citation Text show less

    Abstract

    The longitudinal-mode behaviors of proton-bombarded stripe-geometry GaAs-GaAlAs laser with a very long cavity have been investigated experimentally and theoritically. It has been found that the devices with a long cavities can maintain stable single longitudinal mode operation over wide current range above threshold.
    Shen Feng, Xie Jingshan, Guo Changzhi. Longitudinal-mode behavior of stripe-geometry semiconductor lasers with a very long cavity[J]. Chinese Journal of Lasers, 1985, 12(11): 664
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