Xu-Yang Liu, He-Qiu Zhang, Bing-Bing Li, Jun Liu, Dong-Yang Xue, Heng-Shan Wang, Hong-Wei Liang, Xiao-Chuan Xia. Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor [J]. Acta Physica Sinica, 2020, 69(4): 047201-1
- Acta Physica Sinica
- Vol. 69, Issue 4, 047201-1 (2020)
Fig. 1. Schematic diagram of the device structure.
Fig. 2. The voltage change across the HEMT device with temperature when the current is fixed.
Fig. 3. I-V characteristic curve of HEMT device at 50−400 °C
Fig. 4. Curve and fitting curve of voltage changes with temperature at fixed current (0.01 A).
Fig. 5. Device sensitivity as a function of channel length.
Fig. 6. Temperature stability of the device in N2 atmosphere.
Fig. 7. Temperature stability of the device in an air atmosphere.
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Table 1. Some semiconductor high temperature sensors in various structures.
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Table 2.
List of fitting parameters.
拟合参数列表
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