• Journal of the Chinese Ceramic Society
  • Vol. 50, Issue 3, 798 (2022)
JIN Xinyu1,*, TIAN Hao1,2,3, TAN Peng1, and WANG Xiaoou1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.14062/j.issn.0454-5648.20210760 Cite this Article
    JIN Xinyu, TIAN Hao, TAN Peng, WANG Xiaoou. Electric-Field-Induced Strain Distribution Characteristics of Fe Doped Fe:KTa1-xNbxO3 Crystal[J]. Journal of the Chinese Ceramic Society, 2022, 50(3): 798 Copy Citation Text show less

    Abstract

    KTa1-xNbxO3 crystal doped with 0.15% (in mole fraction) Fe was prepared by a top-seeded solution growth method. The dielectric properties, electric-field-induced strain distribution, component distribution and domain structure of Fe: KTN crystal were characterized. The results show that digital holography is a promising method to measure the spatial distribution of strain, and the electric-field-induced strain properties of KTN crystal present a uneven distribution. At room temperature, the maximum strain of crystal is 0.05% when the applied electric field is 435 V/mm, while the strain value is near 0.02% 3/4 area of crystal. There is a relationship among strain distribution, component distribution and domain structure of Fe:KTN crystal. The domain structure of crystal in the region with less Nb content is smaller and the electric-field-induced strain is greater when the room temperature is lower than the Curie temperature.
    JIN Xinyu, TIAN Hao, TAN Peng, WANG Xiaoou. Electric-Field-Induced Strain Distribution Characteristics of Fe Doped Fe:KTa1-xNbxO3 Crystal[J]. Journal of the Chinese Ceramic Society, 2022, 50(3): 798
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