To achieve high-precision detection of high-speed targets and meet the application requirements of radiation environments, a CMOS image sensor architecture, pixel structure, column-parallel high-precision digitization, high-speed readout, and radiation hardening are investigated to solve problems such as compatibility issues between global and rolling exposure modes, low sensitivity and dynamics, low frame rate, and low radiation-resistance levels. Based on a single-sided column-parallel direct digital synthesis (DDS) and multi-mode compatible architecture, a 7.5 μm×7.5 μm, 2 048×2 048 visible-light CMOS image sensor is developed. A dual-gain pixel structure, high-frame-rate digital readout, multiple-channel selectable output, and pixel/circuit radiation hardening are adopted to achieve global and rolling exposure compatibility, high-sensitivity and dynamic imaging, high-precision digitization and high-speed output, and radiation hardening. The sensor fills a gap in domestic research on multimode exposure-compatible radiation-resistance contact image sensor (CIS) technology.Test results show that the device functions normally, the imaging output is satisfactory, and the parameters meet the expected requirements. These include the dynamic range, full well capacity, sensitivity, frame rate, and radiation resistance. These results are of great significance for high-speed, high-dynamic imaging, and radiation-environment system applications.