• Journal of Advanced Dielectrics
  • Vol. 15, Issue 2, 2450022 (2025)
Hanwen Ni*, Zichen He**, and Zhifu Liu***
DOI: 10.1142/S2010135X2450022X Cite this Article
Hanwen Ni, Zichen He, Zhifu Liu. Effect of A/B sites co-doping on the structure, electric and dielectric properties of CaTiSiO5 ceramics[J]. Journal of Advanced Dielectrics, 2025, 15(2): 2450022 Copy Citation Text show less

Abstract

Dielectrics with high permittivity and temperature stability are important for the development of high-temperature multilayer ceramic capacitors (MLCCs). In this study, Ca1?xNaxTi1?xNbxSiO5 (abbreviated as CTS?xNN) ceramics were prepared by solid-phase reaction method. The introduction of NN weakens the long-range ordered displacement of Ti, leading to a significant increase in the dielectric temperature stability. The CTS?2%NN samples exhibit high permittivity (53) and TCC ±170 ppm/°C in the range of ?55°C to 300°C. The CTS-based ceramics behave high dielectric temperature stability. In addition, the bandgap of the CTS-based ceramics increased significantly, which is favorable for improving the breakdown strength of the material. For x=4% samples, the breakdown strength reaches 621kV/cm. Thus, the designed CTS-based dielectrics are promising for high-temperature capacitors.
Hanwen Ni, Zichen He, Zhifu Liu. Effect of A/B sites co-doping on the structure, electric and dielectric properties of CaTiSiO5 ceramics[J]. Journal of Advanced Dielectrics, 2025, 15(2): 2450022
Download Citation