By the use of a semiconductor gain chip with InGaAs multiple quantum wells as materials in the active region and the AlGaAs/AlAs, transparent to the pump light, as distributed Bragg reflectors, along with the end-pump geometry to simplify the device structure and an inserted etalon as the tuning element, an optically-pumped compact tunable external-cavity surface-emitting green laser is realized by the intra-cavity frequency doubling technology. The employed etalon narrows the laser linewidth as a tuning element. To prevent the second harmonic from returning to the gain chip, the etalon is coated with a high-reflectivity film at the wavelength of the second harmonic. The tuning range of the fundamental wave is over 10 nm and that of the second harmonic is 4 nm centering at 559 nm. The spectral linewidth of the second harmonic is 1.0 nm and the maximum output power is 65 mW.