In order to reduce the reflectivity of polysilicon surface, a picosecond laser is adopted to fabricate array pores on the polysilicon surface. The action mechanism of each laser parameter on the texturing depth is analyzed and the optimal experimental parameters with laser power of 15 W, pulse frequency of 25 kHz, scanning speed of 0.9 m/s and scanning times of 2 are chosen. Based on these optimal parameters, the influence of textured pore pitch on the polysilicon surface reflectivity is verified, and the open-circuit voltage and the short-circuit current of different textured silicon wafers are simulated by the PC1D software. The results show that, there exist the most compact pores with the best morphology on the polysilicon surface when the pore pitch is 30 μm. The pore density is 1.17×105 counts·cm-2, the surface reflectivity is 6.95% and the photoelectric conversion efficiency of the polysilicon battery is increased to 18.45%.