Jiawei CHEN, Yudong LI, MALIYA·Heini , Qi GUO, Xiyan LIU. Radiation effect and simulation of 850 nm vertical-cavity surface-emitting laser[J]. NUCLEAR TECHNIQUES, 2022, 45(11): 110202
- NUCLEAR TECHNIQUES
- Vol. 45, Issue 11, 110202 (2022)
Fig. 1. Silvaco model structure diagram of 850 nm VCSEL (a) and partial enlarged view of the quantum well region when the VCSEL is operating (b)
Fig. 2. Relationship between L-I characteristics of VCSEL and proton fluence under 3 MeV proton irradiation
Fig. 3. Relationship between normalized threshold current of VCSEL and DDD after 3 MeV and 10 MeV irradiation
Fig. 4. Comparison between simulation and experimental results of L-Icurve after 3 MeV proton irradiation
Fig. 5. Comparison of normalized threshold current extracted from simulation and experimental results
Fig. 6. Variation of trap dose, donor and acceptor ionized density with DDD extracted from Silvaco
Fig. 7. Relationship between VCSEL mirror loss and proton fluence after 10 MeV proton irradiation
Fig. 8. Variation of recombination rate and radiative recombination rate at quantum well with DDD
Fig. 9. Relationship between photon number in photon rate equation and DDD
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Table 1. Corresponding DDD of 3 MeV and 10 MeV at different proton fluences
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