• Journal of Terahertz Science and Electronic Information Technology
  • Vol. 19, Issue 5, 753 (2021)
ZHANG Lei, FU Haipeng, MENG Fanyi, WANG Keping, and MA Kaixue*
Author Affiliations
  • [in Chinese]
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    DOI: 10.11805/tkyda2021252 Cite this Article
    ZHANG Lei, FU Haipeng, MENG Fanyi, WANG Keping, MA Kaixue. Silicon-based terahertz technologies and future trends[J]. Journal of Terahertz Science and Electronic Information Technology , 2021, 19(5): 753 Copy Citation Text show less

    Abstract

    Being different from traditional terahertz components, silicon-based terahertz systems have the characteristics of low cost, small size, high integration, great maneuverability, and easier implementation of large arrays for large volume adoption. In the past ten years, with the rapid development of semiconductor technology and the increase of the cut-off frequency of silicon-based process transistors, the field of silicon-based terahertz system chip design has developed rapidly. The current research status and development trends of silicon-based terahertz system chips from four aspects: silicon-based terahertz sources, silicon-based terahertz imaging chips, silicon-based terahertz communication chips, and silicon-based terahertz radar chips are reviewed in this paper.
    ZHANG Lei, FU Haipeng, MENG Fanyi, WANG Keping, MA Kaixue. Silicon-based terahertz technologies and future trends[J]. Journal of Terahertz Science and Electronic Information Technology , 2021, 19(5): 753
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