on Penetration-Type Defects ofHgCdTe Prepared by LPE

Yi-lin HU; Hai-yan YANG; Wei-lin SHE; Cong WANG; Xiao-shuai XING; Qian LI; Jia-jia NIU

doi:10.3969/j.issn.1672-8785.2023.04.003

Journals >INFRARED >Volume 44 >Issue 4 >Page 14 > Article

INFRARED
Vol. 44, Issue 4, 14 (2023)

on Penetration-Type Defects ofHgCdTe Prepared by LPE

Yi-lin HU, Hai-yan YANG, Wei-lin SHE, Cong WANG, Xiao-shuai XING, Qian LI, and Jia-jia NIU

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[in Chinese]

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DOI: 10.3969/j.issn.1672-8785.2023.04.003 Cite this Article

HU Yi-lin, YANG Hai-yan, SHE Wei-lin, WANG Cong, XING Xiao-shuai, LI Qian, NIU Jia-jia. on Penetration-Type Defects ofHgCdTe Prepared by LPE[J]. INFRARED, 2023, 44(4): 14 Copy Citation Text

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References

[1] Hu W, Li Q, Chen X, et al. Recent Progress on Advanced Infrared Photodetectors [J]. Acta Physica Sinica, 2019, 68(12): 120701.

[2] Rogalski A. History of Infrared Detectors [J]. Opto-Electronics Review, 2012, 20(3): 279-308.

[3] Rogalski A, Antoszewski J, Faraone L. Third-generation Infrared Photodetector Arrays [J]. Journal of Applied Physics, 2009, 105(9): 1-44.

[6] Zandian M, Arias J M, Bajaj J, et al. Origin of Void Defects in Hg1-xCdxTe Grown by Molecular Beam Epitaxy [J]. Journal of Electronic Materials, 1995, 24(9): 1207-1210.

[7] Sen S, Liang C S, Rhiger D R, et al. Reduction of CdZnTe Substrate Defects and Relation to Epitaxial HgCdTe Quality [J]. Journal of Electronic Materials, 1996, 25(8): 1188-1195.

[12] Bauser E. Development of Depressions and Voids During LPE Growth of GaAs [J]. Applied. Physics, 1978, 15(3): 243-252.

HU Yi-lin, YANG Hai-yan, SHE Wei-lin, WANG Cong, XING Xiao-shuai, LI Qian, NIU Jia-jia. on Penetration-Type Defects ofHgCdTe Prepared by LPE[J]. INFRARED, 2023, 44(4): 14

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