In this paper, an active region structure of GaAs-based 1 060 nm high performance laser diode was designed. An strain compensation structure of antimonide GaAsP/InGaAs/GaAsSb/InGaAsSb/GaAsP was introduced into the active region, which alter the energy band structure of active region and solve the limitation of bandgap width on emission wavelength. The weak type Ⅱ quantum well band structure is transformed into type Ⅰ, and the overlap of the electron and hole wave functions increase. The transition probability, radiation recombination probability and internal quantum efficiency are improved, and the non-radiative recombination is reduced. Therefore, output power and electro-optical conversion efficiency of the device are effectively enhanced. Additionally, an asymmetric hetero-double narrow waveguide structure was designed. The p-side of the structure used AlGaAs with large conduction band offset and small valence band offset as the inner and outer waveguide layers, which is beneficial for valence band holes injecting into the active region and restricted electrons in the conduction band. The n-side of the structure used GaInAsP with small conduction band offset and large valence band offset as the inner and outer waveguide layers, which is beneficial for conduction band electrons injecting into the active region and forming a higher potential barrier for holes in the valence band. The electrons injection barrier and holes injection barrier are reduced from 218 and 172 meV to 148 and 155 meV, respectively, which improve the carrier injection efficiency. The electron leakage barrier and hole leakage barrier are increased from 252 and 287 meV to 289 and 310 meV, respectively, which enhance carrier confined ability. Finally, output power and electro-optical conversion efficiency of laser diode reach 6.27 W and 85.39%, respectively. The results provide theoretical guidance and data support for achieving high-performance GaAs-based 1 060 nm laser diode.