• High Power Laser and Particle Beams
  • Vol. 37, Issue 5, 051003 (2025)
Sien Ye1,2, Danyang Huang1,2, Xianghe Fu1,2, Xiaolong Zhao1,2,*, and Yongning He1,2
Author Affiliations
  • 1Faculty of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
  • 2The Key Lab of Micro-Nano Electronics and System Integration, Xi’an Jiaotong University, Xi’an 710049, China
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    DOI: 10.11884/HPLPB202537.240362 Cite this Article
    Sien Ye, Danyang Huang, Xianghe Fu, Xiaolong Zhao, Yongning He. Electron radiation effects on a 4H-SiC bipolar phototransistor[J]. High Power Laser and Particle Beams, 2025, 37(5): 051003 Copy Citation Text show less

    Abstract

    The electron irradiation effect of a 4H-SiC npn bipolar transistor UV detector is investigated in this paper. When the phototransistor is biased at 5 V, before irradiation, its dark current is about 58 nA, and its responsivity to 365 nm UV light is about 31A/W. After the device is irradiated by a 10 MeV e-beam, the order of magnitude of the dark current decreases to 10-11 A, and the responsivity decreases to about 1/8 of the original one. After irradiation, the responsivity of the device is significantly affected by the bias voltage: it decreases as the bias voltage decreases, and when the phototransistor is biased at 3 V, the responsivity decreases to 2.25 A/W. E-beam irradiation also affects the switching response of the UV detector, which results in a longer total time of response. In this paper, the circuit model of phototransistor operation is established, and the decrease of light generation current, the decrease of transistor gain and the increase of series resistance caused by electron beam irradiation are the main reasons for the degradation of photodetector’s UV response performance.
    Sien Ye, Danyang Huang, Xianghe Fu, Xiaolong Zhao, Yongning He. Electron radiation effects on a 4H-SiC bipolar phototransistor[J]. High Power Laser and Particle Beams, 2025, 37(5): 051003
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