• Chinese Journal of Lasers
  • Vol. 40, Issue 7, 707001 (2013)
Chang Yanhe1、2、*, Jin Chunshui1, Li Chun1, and Jin Jingcheng1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/cjl201340.0707001 Cite this Article Set citation alerts
    Chang Yanhe, Jin Chunshui, Li Chun, Jin Jingcheng. Laser Induced Damage of Fluoride Coatings at 193 nm[J]. Chinese Journal of Lasers, 2013, 40(7): 707001 Copy Citation Text show less

    Abstract

    Defects in thin films are one of the most important factors influencing laser induced damage in the thin film components at ArF laser system. In order to analysis the defects of fluoride thin films in wavelength of deep ultraviolet (DUV), LaF3 and MgF2 single layers, LaF3/MgF2 half high reflection (HR) coatings and HR coatings are prepared by thermal evaporation on CaF2, the laser induced damage thresholds (LIDT) at the wavelength of 193 nm for the LaF3 single layer and HR coatings are measured. Nomarski microscope is used to observe the surface defects and damage morphology. It is found that the LaF3 single layer surface becomes more smooth after the preparation, while the MgF2 layer appears a few defects, and the defects increase as the layer number goes up. Based on micrograph of the thin films, lots of defects play a leading role in HR coating damage mechanism at this condition.
    Chang Yanhe, Jin Chunshui, Li Chun, Jin Jingcheng. Laser Induced Damage of Fluoride Coatings at 193 nm[J]. Chinese Journal of Lasers, 2013, 40(7): 707001
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