• Acta Physica Sinica
  • Vol. 68, Issue 3, 038501-1 (2019)
Yang Cao1, Kai Xi2, Yan-Nan Xu1、2, Mei Li2, Bo Li2, Jin-Shun Bi1、2、*, and Ming Liu2
Author Affiliations
  • 1University of Chinese Academy of Sciences, Beijing 100049, China
  • 2Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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    DOI: 10.7498/aps.68.20181661 Cite this Article
    Yang Cao, Kai Xi, Yan-Nan Xu, Mei Li, Bo Li, Jin-Shun Bi, Ming Liu. Total ionizing dose effects of γ and X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell [J]. Acta Physica Sinica, 2019, 68(3): 038501-1 Copy Citation Text show less
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    Yang Cao, Kai Xi, Yan-Nan Xu, Mei Li, Bo Li, Jin-Shun Bi, Ming Liu. Total ionizing dose effects of γ and X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell [J]. Acta Physica Sinica, 2019, 68(3): 038501-1
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