• Optoelectronics Letters
  • Vol. 12, Issue 3, 192 (2016)
Liang ZHAO, Zuo-xing GUO, De-zeng YUAN, Qiu-lin WEI, and Lei ZHAO*
Author Affiliations
  • Key Lab of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun 130025, China
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    DOI: 10.1007/s11801-016-5272-6 Cite this Article
    ZHAO Liang, GUO Zuo-xing, YUAN De-zeng, WEI Qiu-lin, ZHAO Lei. TEM study of dislocations structure in In0.82Ga0.18As/In Pheterostructure with InGaAs as buffer layer[J]. Optoelectronics Letters, 2016, 12(3): 192 Copy Citation Text show less
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    ZHAO Liang, GUO Zuo-xing, YUAN De-zeng, WEI Qiu-lin, ZHAO Lei. TEM study of dislocations structure in In0.82Ga0.18As/In Pheterostructure with InGaAs as buffer layer[J]. Optoelectronics Letters, 2016, 12(3): 192
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