• Chinese Journal of Lasers
  • Vol. 48, Issue 13, 1301004 (2021)
Songqing Zha1、2, Yujin Chen2、*, Mingyao Deng2、4, Yanfu Lin2, Bingxuan Li2, Yuqi Zou3, Wenbin Liao2, Zhanglang Lin2, and Ge Zhang2、**
Author Affiliations
  • 1School of Chemistry, Fuzhou University, Fuzhou, Fujian 351100, China
  • 2Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 351100, China
  • 3Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200000
  • 4College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, Fujian 351100, China
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    DOI: 10.3788/CJL202148.1301004 Cite this Article Set citation alerts
    Songqing Zha, Yujin Chen, Mingyao Deng, Yanfu Lin, Bingxuan Li, Yuqi Zou, Wenbin Liao, Zhanglang Lin, Ge Zhang. Passively Q-Switched a-Cut Er, Yb∶YAl3(BO3)4 Microchip Laser[J]. Chinese Journal of Lasers, 2021, 48(13): 1301004 Copy Citation Text show less
    Diagram of laser operating mechanism of energy level structure in Er, Yb∶YAB crystal
    Fig. 1. Diagram of laser operating mechanism of energy level structure in Er, Yb∶YAB crystal
    Transmission spectrum of Co2+∶MgAl2O4 crystal, and experimental setup for passively Q-switched a-cut Er, Yb∶YAB microchip laser. (a) Transmission spectrum of Co2+∶MgAl2O4 crystal; (b) experimental setup for passively Q-switched a-cut Er, Yb∶YAB microchip laser
    Fig. 2. Transmission spectrum of Co2+∶MgAl2O4 crystal, and experimental setup for passively Q-switched a-cut Er, Yb∶YAB microchip laser. (a) Transmission spectrum of Co2+∶MgAl2O4 crystal; (b) experimental setup for passively Q-switched a-cut Er, Yb∶YAB microchip laser
    Experimental performance of microchip laser. (a) Average output power and single pulse energy; (b) repetition rate and pulse duration
    Fig. 3. Experimental performance of microchip laser. (a) Average output power and single pulse energy; (b) repetition rate and pulse duration
    Results recorded by oscilloscope for incident power of 7.2 W. (a) Pulse train and pulse repetition rate; (b) single pulse profile and pulse duration
    Fig. 4. Results recorded by oscilloscope for incident power of 7.2 W. (a) Pulse train and pulse repetition rate; (b) single pulse profile and pulse duration
    Test result of pulse laser polarization, and 2D and 3D images of pulse output spots. (a) Test result of pulse laser polarization; (b) 2D and 3D images of pulse output spots
    Fig. 5. Test result of pulse laser polarization, and 2D and 3D images of pulse output spots. (a) Test result of pulse laser polarization; (b) 2D and 3D images of pulse output spots
    HostcrystalRepresentativecrystalPumpwavelength /nmLaserwavelength /nmConversionefficiency /%Pumppower /WMaximumoutputpower /WRef. No
    BorateEr,Yb∶YAl3(BO3)4976155039.807.20(incident power)2.00[16]
    SilicateEr, Yb∶Lu2Si2O7976156420.005.50(absorbable power)0.94[19]
    TungstateEr, Yb∶KY(WO4)298015901.666.50(absorbable power)0.08[20]
    OtherEr, Yb∶YAG96516457.000.45(absorbable power)0.03[21]
    Er, Yb∶YVO498016045.402.25(absorbable power)0.13[22]
    Table 1. Conversion efficiency and maximum output power of various representative crystals in continuous laser experiments
    Songqing Zha, Yujin Chen, Mingyao Deng, Yanfu Lin, Bingxuan Li, Yuqi Zou, Wenbin Liao, Zhanglang Lin, Ge Zhang. Passively Q-Switched a-Cut Er, Yb∶YAl3(BO3)4 Microchip Laser[J]. Chinese Journal of Lasers, 2021, 48(13): 1301004
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