Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 \mm

D. Bimberg; C. Meuer; M. Lammlin; S. Liebich; J. Kim; A. Kovsh; I. Krestnikov; G. Eisenstein

doi:10.3788/COL20080610.0724

Journals >Chinese Optics Letters >Volume 6 >Issue 10 >Page 724 > Article

Chinese Optics Letters
Vol. 6, Issue 10, 724 (2008)

Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 \mm

D. Bimberg^*, C. Meuer, M. Lammlin, S. Liebich, J. Kim, A. Kovsh, I. Krestnikov, and G. Eisenstein

Author Affiliations

Institut für Festkorperphysik, Technische Universitat Berlin, EW 5-2, Hardenbergstr. 36, 10623 Berlin, Germany2 Innolume GmbH, Konrad-Adenauer-Allee 11, 40263 Dortmund, Germany3 Electrical Engineering Department, Technion, Haifa 32000, Israel

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DOI: 10.3788/COL20080610.0724 Cite this Article Set citation alerts

D. Bimberg, C. Meuer, M. Lammlin, S. Liebich, J. Kim, A. Kovsh, I. Krestnikov, G. Eisenstein. Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 \mm[J]. Chinese Optics Letters, 2008, 6(10): 724 Copy Citation Text

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Abstract

The dynamics of nonlinear processes in quantum dot (QD) semiconductor optical amplifiers (SOAs) are investigated. Using small-signal measurements, the suitabilities of cross-gain and cross-phase modulation as well as four wave mixing (FWM) for wavelength conversion are examined. The cross-gain modulation is found to be suitable for wavelength conversion up to a frequency of 40 GHz.

Keywords

190.4720 250.5590 250.5980

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