• Chinese Journal of Lasers
  • Vol. 46, Issue 4, 0404001 (2019)
Jie Cheng1、*, Xiangning Wang1, Yongliang Xiao2, and Gengsheng Yu1、*
Author Affiliations
  • 1 School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China
  • 2 School of Physics and Optoelectronics, Xiangtan University, Xiangtan, Hunan 411105, China
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    DOI: 10.3788/CJL201946.0404001 Cite this Article Set citation alerts
    Jie Cheng, Xiangning Wang, Yongliang Xiao, Gengsheng Yu. Simulation of Scattering Characteristics of Micro- and Nano-Scale Defects in Sapphire Wafer[J]. Chinese Journal of Lasers, 2019, 46(4): 0404001 Copy Citation Text show less
    Coordinate system of spherical particle scattering
    Fig. 1. Coordinate system of spherical particle scattering
    Simulation model of laser detection system for microsphere defect
    Fig. 2. Simulation model of laser detection system for microsphere defect
    Scattering light intensity distributions of SiO2 microsphere defect with different sizes at different receiving positions
    Fig. 3. Scattering light intensity distributions of SiO2 microsphere defect with different sizes at different receiving positions
    Spatial scattering light intensity distributions of Al microsphere defect with different sizes. (a) q=75;(b) q=50;(c) q=25;(d) q=10
    Fig. 4. Spatial scattering light intensity distributions of Al microsphere defect with different sizes. (a) q=75;(b) q=50;(c) q=25;(d) q=10
    Spatial scattering light intensity distributions of SiO2 microsphere defect at different incident wavelengths
    Fig. 5. Spatial scattering light intensity distributions of SiO2 microsphere defect at different incident wavelengths
    Spatial scattering light intensity distributions of SiO2 microsphere defect with different sizes when λ is 350 nm. (a) q=20, R=1.11 mm;(b) q=10, R=0.56 mm
    Fig. 6. Spatial scattering light intensity distributions of SiO2 microsphere defect with different sizes when λ is 350 nm. (a) q=20, R=1.11 mm;(b) q=10, R=0.56 mm
    qθ=30°θ=45°θ=60°θ=90°θ=120°
    CrestTroughCrestTroughCrestTroughCrestTroughCrestTrough
    100121113141213101077
    504566665543
    253333232321
    Table 1. Ripple number of scattering light for defects with different sizes at different scattering angles θ
    qm=0.56m=0.83m=0.82+2.0im=1.4
    CrestTroughCrestTroughCrestTroughCrestTrough
    7510910911101111
    5066667678
    2533334334
    1011111221
    511011111
    Table 2. Ripple number of scattered light for defects with different sizes when θ is 45°
    Jie Cheng, Xiangning Wang, Yongliang Xiao, Gengsheng Yu. Simulation of Scattering Characteristics of Micro- and Nano-Scale Defects in Sapphire Wafer[J]. Chinese Journal of Lasers, 2019, 46(4): 0404001
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