• Frontiers of Optoelectronics
  • Vol. 6, Issue 1, 114 (2013)
Diqiu HUANG, Xiangbin ZENG*, Yajuan ZHENG, Xiaojin WANG, and Yanyan YANG
Author Affiliations
  • School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
  • show less
    DOI: 10.1007/s12200-012-0302-x Cite this Article
    Diqiu HUANG, Xiangbin ZENG, Yajuan ZHENG, Xiaojin WANG, Yanyan YANG. Influence of process parameters on band gap of Al-doped ZnO film[J]. Frontiers of Optoelectronics, 2013, 6(1): 114 Copy Citation Text show less
    References

    [1] Wang X J, Zeng X B, Huang D Q, Zhang X, Li Q. The properties of Al doped ZnO thin films deposited on various substrate materials by RF magnetron sputtering. Journal of Materials Science: Materials in Electronics, 2012, 23(8): 1580-1586

    [2] Wang X J, Zeng X B, Huang D Q, Zhang X, Li Q. Structural, electrical and optical properties of aluminum doped zinc oxide deposited on glass and polyimide by RF magnetron sputtering method. Laser & Optoelectronics Progress, 2012, 49(4): 173-178

    [3] Ma Q, Ye Z, He H, Zhu L, Zhao B. Effects of deposition pressure on the properties of transparent conductive ZnO: Ga films prepared by DC reactive magnetron sputtering. Materials Science in Semiconductor Processing, 2007, 10(4-5): 167-172

    [4] Grundmann M, Wenckstern H, Pickenhain R, Nobis Th, Rahm A, Lorenz M. Electrical properties of ZnO thin films and optical properties of ZnO-based nanostructures. Superlattices and Microstructures, 2005, 38(4-6): 317-328

    [5] Cao H T, Pei Z L, Gong J, Sun C, Huang R F,Wen L S. Transparent conductive Al and Mn doped ZnO thin films prepared by DC reactive magnetron sputtering. Surface and Coatings Technology, 2004, 184(1): 84-92

    [6] Jin Z C, Hamberg I, Granqvist C G. Optical properties of sputterdeposited ZnO:Al thin films. Applied Physics (Berlin), 1988, 64(10): 5117-5131

    [7] Henley S J, Ashfold M N R, Cherns D. The growth of transparent conducting ZnO films by pused laser ablation. Surface and coatings Technology, 2004, 177-178: 271-276

    [8] Carlsson J M, Domingos H S, Bristowe P D, Hellsing B. An interfacial complex in ZnO and its influence on charge transport. Physical Review Letters, 2003, 91(16): 165506

    [9] Oba F, Adachi H, Tanaka I. Energetics and electronic structure of point defects associated with oxygen excess at a tilt boundary of ZnO. Journal of Materials Research, 2000, 15(10): 2167-2175

    [10] Yang Y Y, Zeng X B, Zeng Y, Liu L, Chen Q K. Deposition of quasi-crystal Al-doped ZnO thin films for photovoltaic device applications. Applied Surface Science, 2010, 257(1): 232-238

    [11] Minami T. New n-type transparent conducting oxides. MRS Bulletin, 2000, 25(08): 38-44

    [12] Xiu X W, Pang Z Y, Lv M S, Dai Y, Ye L, Han S. Transparent conducting molybdenum-doped zinc oxide films deposited by RF magnetron sputtering. Applied Surface Science, 2007, 253(6): 3345-3348

    [13] Olvera M de la L, Maldonado A, Asomoza R, Solorza O, Acosta D R. Characteristics of ZnO:F thin films obtained by chemical spray. Effect of the molarity and the doping concentration. Thin Solid Films, 2001, 394(1- 2): 241-248

    [14] Fang G, Li D, Yao B L. Fabrication and characterization of transparent conductive ZnO:Al thin films prepared by direct current magnetron sputtering with highly conductive ZnO(ZnAl2O4) ceramic target. Journal of Crystal Growth, 2003, 247(3-4): 393-400

    [15] Yang W, Liu Z, Peng D L, Zhang F, Huang H, Xie Y,Wu Z. Roomtemperature deposition of transparent conducting Al-doped ZnO films by RF magnetron sputtering method. Applied Surface Science, 2009, 255(11): 5669-5673

    [16] Guo X L, Tabata H, Kawai T. Epitaxial growth and optoelectronic properties of nitrogen-doped ZnO films on Al2O3 substrate. Journal of Crystal Growth, 2002, 237-239: 544-547

    [17] Hao X T, Ma J, Zhang D H, Yang Y G, Ma H L, Cheng C F, Liu X D. Comparison of the properties for ZnO:Al films deposited on polyimide and glass substrates. Materials Science and Engineering B, 2002, 90(1-2): 50-54

    [18] Lee H J, Lee J A, Lee J H, Heo Y W, Kim J J, Park S K, Lim J. Optical band gap modulation by Mg-doping in In2O3(ZnO)3 ceramics. Ceramics International, 2012, 38: 6693-6697

    [19] Wu Y F, Chen H Y. Prediction of band gap reduction and magnetism in (Cu,S)-codoped ZnO. Journal of Magnetism and Magnetic Materials, 2012, 324(13): 2153-2157

    [20] Liu Y, Hou Q Y, Xu H P, Zhao C W, Zhang Y. The band gap broadening and absorption spectrum of wurtzite Zn1 - xCoxO from first-principles calculations. Chemical Physics Letters, 2012, 551: 72-77

    [21] Lin C K, Zhao D, GaoWY, Yang Z, Ye J, Xu T, Ge Q, Ma S, Liu D J. Tunability of band gaps in metal-organic frameworks. Inorganic Chemistry, 2012, 51(16): 9039-9044

    [22] Duan L B, Zhao X R, Liu J M, GengW C, Sun H N, Xie H Y. Band gap modified Al-doped Zn1 - xMgxO and Zn1 - yCdyO transparent conducting thin films. Journal of Materials Science: Materials in Electronics, 2012, 23(5): 1016-1021

    [23] Aydin C, Al-Hartomy O A, Al-Ghamdi A A, Al-Hazmi F, Yahia I S, El-Tantawy F, Yakuphanoglu F. Controlling of crystal size and optical band gap of CdO nanopowder semiconductors by low and high Fe contents. Journal of Electroceramics, 2012, 29(2): 155-162

    [24] Ma S Z, Liang H K, Wang X H, Zhou J, Li L T, Sun C Q. Controlling the band gap of ZnO by programmable annealing. Journal of Physical Chemistry C, 2011, 115: 20487-20490

    [25] Moon Y K, Bang B, Kim H, Jeong C O, Park J W. Effects of working pressure on the electrical and optical properties of aluminum-doped zinc oxide thin films. Journal of Materials Science Materials in Electronics, 2008, 19(6): 528-532

    [26] Kappertz O, Drese R, Ngaruiya J M, Wuttig M. Reactive sputter deposition of zinc oxide: Employing resputtering effects to tailor film properties. Thin Solid Films, 2005, 484(1-2): 64-67

    [27] Kamat P V, Dimitrijevic N M, Nozik A J. Dynamic burstein-moss shift in semiconductor colloids. Journal of Physical Chemistry, 1989, 93(8): 2873-2875

    [28] Nobbs J H. Kubelka-Munk theory and the predication of reflectance. Review of Progress in Coloration and Related Topics, 1985, 15(1): 66-75

    [29] Liu Y P, Chen F, Guo A B, Li B, Dan M, Liu M H, Hu X W. Preparation and application of transparent conductive AZO thin film. Vacuum and Cryogenics, 2007, 13(1): 1-6

    Diqiu HUANG, Xiangbin ZENG, Yajuan ZHENG, Xiaojin WANG, Yanyan YANG. Influence of process parameters on band gap of Al-doped ZnO film[J]. Frontiers of Optoelectronics, 2013, 6(1): 114
    Download Citation