Development of D-Band and G-Band frequency multiply sources with Schottky diodes of NEDI

YAO Chang-Fei; ZHOU Ming; LUO Yun-Sheng; LIN Gang; LI Jiao; XU Cong-Hai; KOU Ya-Nan; WU Gang; WANG Ji-Cai

doi:10.3724/sp.j.1010.2014.00256

Journals >Journal of Infrared and Millimeter Waves >Volume 33 >Issue 3 >Page 256 > Article

Journal of Infrared and Millimeter Waves
Vol. 33, Issue 3, 256 (2014)

Development of D-Band and G-Band frequency multiply sources with Schottky diodes of NEDI

YAO Chang-Fei^1、2、*, ZHOU Ming², LUO Yun-Sheng², LIN Gang¹, LI Jiao², XU Cong-Hai², KOU Ya-Nan², WU Gang², and WANG Ji-Cai²

Author Affiliations

¹[in Chinese]

²[in Chinese]

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DOI: 10.3724/sp.j.1010.2014.00256 Cite this Article

YAO Chang-Fei, ZHOU Ming, LUO Yun-Sheng, LIN Gang, LI Jiao, XU Cong-Hai, KOU Ya-Nan, WU Gang, WANG Ji-Cai. Development of D-Band and G-Band frequency multiply sources with Schottky diodes of NEDI[J]. Journal of Infrared and Millimeter Waves, 2014, 33(3): 256 Copy Citation Text

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Abstract

Terahertz Schottky varistor diode with cutoff frequency of 3.2THz was developed based on GaAs process of Nanjing Electronic Devices Institute (NEDI). The performances of diodes are optimized by optimization of active layer (expital layer and buffer layer) doping, thickness, and Schottky contact area. Physical structure of the nonlinear diode was setup, and EM software and circuit software were combined together for impedance matching analysis. For the D-band doubler, highest measured multiply efficiency is 2.7% at 152.6GHz, and typical efficiency is 1.3% in 147.4～155GHz. For the G-band doubler, highest measured multiply efficiency is 2.1% at 172GHz, and typical efficiency is 1.0% in 150～200GHz.

Keywords

GaAs Schottky diode multipliers Terahertz

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