[2] XU Zheng-ping, SHEN Hong-hai, XU Yong-sen. Review of the development of laser active imaging system with direct ranging[J]. Chinese Optics, 2015, 8 (1): 28-38.
[5] AN Ning, HAN Xing-wei, LIU Cheng-zhi, et al. Simulation analysis of 2 μm InGaAsSb/AlGaAsSb laser diode with dual waveguide[J]. Acta Photonica Sinica, 2016, 45(9): 0914001.
[6] QIAO Zhong-liang, BO Bao-xue, GAO Xin, et al. High brightness high power broad area semiconductor lasers with no-absorption mode filter[J]. Chinese Journal of Lasers, 2011, 38(4): 13-18.
[7] FIEBIG C, BLUME G, KASPARI C,et al. 12W high-brightness single-frequency DBR tapered diode laser[J]. Electronics Letters, 2008, 44(21): 1253-1255.
[8] WALPOLE J N. Semiconductor amplifiers and lasers with tapered gain regions[J]. Optical & Quantum Electronics, 1996, 28(6): 623-645.
[9] BORRUEL L, SUJECKI S, MORENO P, et al. Quasi-3-D simulation of high-brightness tapered lasers[J]. IEEE Journal of Quantum Electronics, 2004, 40(5): 463-472.
[10] KALLENBACH S, KELEMEN M T, AIDAM R, et al. High-power high-brightness ridge-waveguide tapered diode lasers at 14xx nm[C]. SPIE, 2005, 5738: 406-415.
[11] OSTENDORF R, KAUFEL G, MORITZ R,et al. 10W high-efficiency high-brightness tapered diode lasers at 976 nm[C]. SPIE, 2008, 6876: 61124-61124.
[12] GOKDEN B, MANSURIPUR T S, BLANCHARD R, et al. High-brightness tapered quantum cascade lasers[J]. Applied Physics Letters, 2013, 102(5): 511-R.
[13] PU Tao-fei, ZHANG Jing. High-power high beam quality tapered semiconductor laser[J]. Journal of Changchun University of Science and Technology, 2015, 38(2): 9-12.
[14] RAWAL D S, SEHGAL B K, MURALIDHARANR, et al. Experimental study of the influence of process pressure and gas composition on GaAs etching characteristics in Cl2 /BCl3-based inductively coupled plasma[J]. Plasma Science and Technology, 2011, 13(2): 223.
[15] LEE J W, JUNG P G, DEVRE M, et al. Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers[J]. Solid-State Electronics, 2002, 46(5): 685-688.
[16] LUO Yue-chuan, HAN Shang-jun, WANG Xue-min, et al. Steepness of the etching of GaAs/AlGaAs multilayer[J]. Information and Electronic Engineering, 2011, 9(3): 347-350.
[17] TANG Zhong-hua. Diagnosis of electronegative capacitively coupled plasma and surface treatment of materials[D]. Suzhou: Soochow University, 2013.
[19] ZHAO Yang-yong, LIU Wei-guo, XI Ying-xue. Surface planarization process of RB-SiC based on magnetron sputtering and ICP etching[J]. Acta Photonica Sinica, 2018, 47(3): 0324001.