• Chinese Optics Letters
  • Vol. 18, Issue 10, 103101 (2020)
Meng Guo1、2、3, Hongbo He1、3、*, Kui Yi1、3, Shuying Shao1、3, Guohang Hu1、3, and Jianda Shao1、3、4
Author Affiliations
  • 1Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
  • 4Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
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    DOI: 10.3788/COL202018.103101 Cite this Article Set citation alerts
    Meng Guo, Hongbo He, Kui Yi, Shuying Shao, Guohang Hu, Jianda Shao. Optical characteristics of ultrathin amorphous Ge films[J]. Chinese Optics Letters, 2020, 18(10): 103101 Copy Citation Text show less
    X-ray diffraction patterns of Ge films: (a) before annealing, (b) after annealing.
    Fig. 1. X-ray diffraction patterns of Ge films: (a) before annealing, (b) after annealing.
    Raman spectra of Ge films: (a), (b), (c) before annealing, (d) after annealing.
    Fig. 2. Raman spectra of Ge films: (a), (b), (c) before annealing, (d) after annealing.
    Thickness at different deposition temperatures: (a) before annealing, (b) after annealing.
    Fig. 3. Thickness at different deposition temperatures: (a) before annealing, (b) after annealing.
    Transmittance of Ge films on fused quartz: (a) before annealing, (b) after annealing.
    Fig. 4. Transmittance of Ge films on fused quartz: (a) before annealing, (b) after annealing.
    Optical band gap of Ge films on fused quartz: (a) before annealing, (b) after annealing.
    Fig. 5. Optical band gap of Ge films on fused quartz: (a) before annealing, (b) after annealing.
    XPS analysis of Ge films after annealing: (a), (d) deposition (100°C) + annealing, (b), (e) deposition (200°C) + annealing, (c), (f) deposition (300°C) + annealing.
    Fig. 6. XPS analysis of Ge films after annealing: (a), (d) deposition (100°C) + annealing, (b), (e) deposition (200°C) + annealing, (c), (f) deposition (300°C) + annealing.
    Meng Guo, Hongbo He, Kui Yi, Shuying Shao, Guohang Hu, Jianda Shao. Optical characteristics of ultrathin amorphous Ge films[J]. Chinese Optics Letters, 2020, 18(10): 103101
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