• Acta Photonica Sinica
  • Vol. 50, Issue 4, 102 (2021)
Tiantian LI1, Yaoning SUN1, Li ZHANG1, Guojian WANG1, Tiandai JIA2, and Aixin FENG2
Author Affiliations
  • 1School of Mechanical Engineering, Xinjiang Unviersity, Urumqi830047, China
  • 2College of Mechanical and Electrical Engineering, Wenzhou University, Wenzhou, Zhejiang35035, China
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    DOI: 10.3788/gzxb20215004.0414002 Cite this Article
    Tiantian LI, Yaoning SUN, Li ZHANG, Guojian WANG, Tiandai JIA, Aixin FENG. Laser Fabrication and Performance of Periodic Microstructure on Polycrystalline Silicon Surface[J]. Acta Photonica Sinica, 2021, 50(4): 102 Copy Citation Text show less
    Schematic of experiment equipment and laser-textured polysilicon sample
    Fig. 1. Schematic of experiment equipment and laser-textured polysilicon sample
    Micro-morphologies and corresponding curves of cross section of laser-textured polysilicon sample under different frequency
    Fig. 2. Micro-morphologies and corresponding curves of cross section of laser-textured polysilicon sample under different frequency
    Average depth of polysilicon samples at different frequency
    Fig. 3. Average depth of polysilicon samples at different frequency
    Reflectivity of untextured and textured polysilicon samples with different technique
    Fig. 4. Reflectivity of untextured and textured polysilicon samples with different technique
    Average reflectivity of laser-textured, chemical etching and untextured polysilicon samples
    Fig. 5. Average reflectivity of laser-textured, chemical etching and untextured polysilicon samples
    3D topography of laser textured and chemical etching
    Fig. 6. 3D topography of laser textured and chemical etching
    Structure diagram of photovoltatic effect
    Fig. 7. Structure diagram of photovoltatic effect
    I⁃U curves of untexture and laser textured polysilicon samples
    Fig. 8. IU curves of untexture and laser textured polysilicon samples
    ParametersValues
    Device area/cm2243.36
    Volume resistivity/(Ω·cm)2.00
    Thickness/μm200.00
    Band gap/eV1.12
    Dielectric constant11.90
    Intrinsic concentration at 300 K/cm21×1010
    Refractive index of Si3.58
    P⁃type background doping/cm21.24×1016
    Front diffusion/(cm-3·peak)N⁃type,2.94×1016
    Bulk recombination /μs25
    Front⁃surface recombination/(cm·s-1)S model, Sn=Sp=1 000
    Rear⁃surface recombination/(cm·s-1)S model, Sn=Sp=200
    Table 1. Simulation parameters
    ParameterValues
    Temperature/℃25
    Incident light power/(W·cm-2)0.1
    Air⁃massAM1.5
    Table 2. Standard test conditions parameter of incident light
    TypeSimulation resultsCalculation results
    Short-circurt current/A

    Max base

    power/W

    Open-circurt voltage/mVCell efficiency/%Fill factor%
    Untextured7.233.63610.514.9382.3
    300×3009.0424.498600.118.4882.8
    310×3109.1174.514598.118.5582.7
    350×3509.0574.567608.118.7782.9
    400×4009.2854.576596.118.8082.6
    Table 3. Simulation results
    Tiantian LI, Yaoning SUN, Li ZHANG, Guojian WANG, Tiandai JIA, Aixin FENG. Laser Fabrication and Performance of Periodic Microstructure on Polycrystalline Silicon Surface[J]. Acta Photonica Sinica, 2021, 50(4): 102
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