[1] Loubriel G M, Zutavern F J, Baca A G. Photoconductive semiconductor switches[J]. IEEE Trans Plasma Sci, 25, 124-130(1997).
[2] Shi W, Tian L, Liu Z. Accurate measurement of the jitter time of GaAs photoconductive semiconductor switches triggered by a one-to-two optical fiber[J]. Appl Phys Lett, 102, 154106(2013).
[3] Yuan Jianqiang, Xie Weiping, Zhou Liangji. Developments and applications of photoconductive semiconductor switches in pulsed power technology[J]. High Power Laser and Particle Beams, 20, 171-176(2008).
[4] Nunally W C. Critical component requirements for compact pulse power system architectures[J]. IEEE Trans Plasma Sci, 33, 1262-1267(2005).
[5] Schoenberg J S H, Burger J W, Tyo J S. Ultra-wideband source using gallium arsenide photoconductive semiconductor switches[J]. IEEE Trans Plasma Sci, 25, 327-334(1997).
[6] Nunally W C. High-power microwave generation using optically activated semiconductor switches[J]. IEEE Trans Electron Devices, 37, 2439-2448(1990).
[7] Liu Yi, Wang Wei, Shen Yi, et al. Lifetime of highpower GaAs photoconductive semiconduct switch triggered by laser of different power density[C] Proc of SPIE. 2014: 92554G.
[9] Loubriel G M, Zutavern F J, Mar A. Longevity of optically activated, high gain GaAs photoconductive semiconductor switches[J]. IEEE Trans Plasma Science, 26, 1393-1402(1998).
[11] Saiz T A, Zutavern F J, Glover S F, et al. PCSS lifetime testing f pulsed power applications[C]Proc of 16th IEEE International Conference on Pulsed Power. 2007: 106109.
[12] Zutavern F J, Mar A, Vawter G A, et al. Multifilament PCSS modules to replace high current pulsed power switches[C]Proc of 19th IEEE International Conference on Pulsed Power. 2013: 16.