Fig. 1. Schematic of one-dimensional asymmetric photonic crystal structure

Fig. 2. Defect mode position versus optical power density of 532 nm laser

Fig. 3. Defect mode position versus optical power density of 1064 nm laser

Fig. 4. Relationship between optical transmittance of 532 nm laser and optical power density of incident laser for each structure

Fig. 5. Relationship between optical transmittance of 1064 nm laser and optical power density of incident laser for each structure

Fig. 6. Effects of thickness fluctuations (within ±5.0 nm) of other two dielectric layers on peak transmittance when thickness of one dielectric layer is constant. (a)Thickness of dielectric layer A is 184.1 nm; (b) thickness of dielectric layer B is 92.0 nm; (c) thickness of dielectric layer C is 138.1 nm

Fig. 7. Effects of thickness fluctuations (within ±5.0 nm) of other two dielectric layers on peak transmittance when thickness of one dielectric layer is constant. (a) Thickness of dielectric layer A is 149.3 nm; (b) thickness of dielectric layer B is 74.7 nm; (c) thickness of dielectric layer C is 112.0 nm

Table 1. Statistical results of transmittance varying with dielectric layer thickness

Table 2. Statistical results of transmittance varying with dielectric layer thickness