DESIGN AND FABRICATION OF 1.3μm UNCOOLED ALGaInAs/InP STRAIN-COMPENSATED QUANTUM WELL LASERS

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Photonica Sinica >Volume 31 >Issue 2 >Page 191 > Article

Acta Photonica Sinica
Vol. 31, Issue 2, 191 (2002)

DESIGN AND FABRICATION OF 1.3μm UNCOOLED ALGaInAs/InP STRAIN-COMPENSATED QUANTUM WELL LASERS

[in Chinese]¹, [in Chinese]², [in Chinese]³, [in Chinese]³, and [in Chinese]³

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¹[in Chinese]

²[in Chinese]

³[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. DESIGN AND FABRICATION OF 1.3μm UNCOOLED ALGaInAs/InP STRAIN-COMPENSATED QUANTUM WELL LASERS[J]. Acta Photonica Sinica, 2002, 31(2): 191 Copy Citation Text

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References

[1] Bhat R,Zah C E,Koza M A,et al.High performance 1.3μm AlGaInAs/InP strained quantum well lasers grown byorganometallic chemical vapor deposition.Journal of Crystal Growth,1994,14(5):858～865

[2] Yamamoto N,Seki S,Noguchi Y,Kondo S.Design criteria of 1.3μm multiple-quantum-well lasers for hightemperature operaiton.IEEE Photo Technol Lett,2000,12(2):137～139

[3] Wang M C,Lin W,Shi T T,Tu Y K.Ultrahigh temperature and ultrahigh speed operation of 1.3μm strained-compensated AlGaInAs/InP uncooled laser diodes .Electronics Lett,31(18):1584～1585

[4] Ishikawa T,Higashi T,Uchida T,et al.Well-thickness dependence of high-temperature characteristics in 1.3μmAlGaInAs/InP strained multiple-quantum-well lasers.IEEE Photon Technol Lett,1998,10:1703～1705

[5] Higashi T,Sweeney S J,Philips A F,et al.Observation of reduced nonradiative current in 3μm AlGaInAs/InPstrained MQW lasers.IEEE Photon Technol Lett,1999,11(4):409～411

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