Research progress of high power semiconductor laser pump source

Xiaoyu Ma; Naling Zhang; Li Zhong; Suping Liu; Hongqi Jing

doi:10.11884/HPLPB202032.200236

Journals >High Power Laser and Particle Beams >Volume 32 >Issue 12 >Page 121010 > Article

High Power Laser and Particle Beams
Vol. 32, Issue 12, 121010 (2020)

Research progress of high power semiconductor laser pump source

Xiaoyu Ma^1、2, Naling Zhang^1、2、*, Li Zhong^1、2、*, Suping Liu^1、2, and Hongqi Jing¹

Author Affiliations

¹National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²College of Materials Science and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China

show less

DOI: 10.11884/HPLPB202032.200236 Cite this Article

Xiaoyu Ma, Naling Zhang, Li Zhong, Suping Liu, Hongqi Jing. Research progress of high power semiconductor laser pump source[J]. High Power Laser and Particle Beams, 2020, 32(12): 121010 Copy Citation Text

show less

Fig. 1. [in Chinese]

Download full size | View in the Article

Fig. 2. [in Chinese]

Download full size | View in the Article

Fig. 3. [in Chinese]

Download full size | View in the Article

Fig. 4. [in Chinese]

Download full size | View in the Article

Fig. 5. [in Chinese]

Download full size | View in the Article

Fig. 6. [in Chinese]

Download full size | View in the Article

Fig. 7. [in Chinese]

Download full size | View in the Article

Fig. 8. [in Chinese]

Download full size | View in the Article

Fig. 9. [in Chinese]

Download full size | View in the Article

Fig. 10. [in Chinese]

Download full size | View in the Article

Fig. 11. [in Chinese]

Download full size | View in the Article

Fig. 12. [in Chinese]

Download full size | View in the Article

year	wavelength/nm	output power/W	key parameters	conversion efficiency/%	research group	reference
2014	88x	18.8	95 μm，3.8 mm	58	USA，nLight	[9]
2015	808	10	190 μm，4 mm	−	Japan，Optoenergy	[10]
2016	808	22	200 μm	54	JENOPTIK	[11]
2016	808	9	140 μm，2 mm	63%	Coherent	[12]
2019	808	14	200 μm，4 mm	64	Ferdinand-Braun-Institut	[13]
2019	808	2.8	100 μm，2 mm	−	Wang Yue	[14]
2020	880	19	200 μm，4 mm	−	Institute of Semiconductors of CAS	−

Table 1.

Output power of 8xx nm single-emitter lasers

8xx nm半导体激光器单管输出功率

year	wavelength/nm	output power	key parameters	fill factor/%	research group	reference
2012	88x	QCW：560 W	bar width：3 mm; cavity length：3 mm	80	USA，nLight	[19]
2013	808	CW：150 W	bar width：1 cm; cavity length：1.5 mm	50	USA，nLight	[20]
2014	88x	QCW：630 W	bar width：3 mm; cavity length：3 mm	80	USA，nLight	[9]
2016	808	QCW：200 W	bar width：5 mm; cavity length：1.5 mm	−	Russia	[21]
2016	880	QCW：250 W	bar width：0.5 cm	80	USA，nLight	[22]
2017	80x	QCW：210 W	bar width：5 mm; cavity length：1 mm	72	M.A. Ladugin	[23]
2017	880	1.8 kW（200 μs，14 Hz）	bar width：1 cm; cavity length：3 mm	80	USA，nLight	[24]
2017	808	QCW：613 W	cavity length：2 mm	85	Xi’an Institute of Optics and Precision Mechanics of CAS	[25]
2018	808	QCW：500 W	cavity length：1.5 mm	80	OSRAM	[26]
2020	8xx	CW：200 W	cm-bar	−	Institute of Semiconductors of CAS	−

Table 2.

Output power of 8xx nm laser bar

8xx nm激光器巴条输出功率

year	wavelength/nm	output power/W	key parameters	conversion efficiency/%	research group	reference
2009	980	20	96 μm，4 mm	−	Ferdinand-Braun-Institut	[32]
2013	975	15	100 μm，4 mm	74	Ferdinand-Braun-Institut	[33]
2013	915	13.5	85 μm，4 mm	−	S.McDougall	[34]
2015	9xx	29.5	100 μm，5.7 mm	−	USA，JDSU	[35]
2015	915	18	150 μm，5 mm	58	USA，nLight	[36]
2015	915	24	100 μm，4 mm	60	Japan，Optoenergy	[37]
2016	915	12.4	95 μm，4.8 mm	60	Research Institute of Tsinghua University in Shenzhen	[38]
2017	915	33	220 μm，4 mm	60	Japan，Fujikura	[39]
2018	940	14	100 μm，4 mm	63	Ferdinand-Braun-Institut	[40]
2019	975	20	200 μm，4 mm	66.7	Japan，Fujikura	[41]
2019	9xx	14.4	200 μm，2 mm	71.8	Institute of Semiconductors of CAS	[42]
2020	975	21	100 μm，4 mm	−	Institute of Semiconductors of CAS	[43]

Table 3.

Output power of 9xx nm single-emitter semiconductor lasers

9xx nm半导体激光器单管输出功率

year	wavelength/nm	output power	key parameters	fill factor/（%）	research group	reference
2013	9xx	QCW：1.7 kW	bar width：1 cm; cavity length：6 mm	72	Ferdinand-Braun-Institut	[45]
2014	940	CW：200 W	cavity length：4 mm	50	Jenoptik	[46]
2015	940	QCW：1.98 kW	bar width：1 cm; cavity length：4 mm	69	Ferdinand-Braun-Institut	[47]
2015	9xx	＞300 W	−	60	USA，Trumpf Photonics	[48]
2016	940	QCW：1 kW	bar width：1 cm; cavity length：4 mm	69	Ferdinand-Braun-Institut	[49]
2017	940	QCW：600 W	bar width：1 cm; cavity length：4 mm	70	M. M. Karow	[50]
2018	938	CW：476 W	−	60	USA，Trumpf Photonics	[51]
2019	9xx	450 W	bar width：1 cm; cavity length：4.2 mm	73	II-VI Laser Enterprise	[52]
2019	9xx	1 kW（0.2 ms，10 Hz）	−	87	Ferdinand-Braun-Institut	[53]
2019	960	665.6 W（500 μs）	bar width：1 cm; cavity length：2 mm	63.8	Xi’an Institute of Optics and Precision Mechanics of CAS	[54]
2020	9xx	CW：300 W, QCW：996 W	cm-bar	70	Institute of Semiconductors of CAS

Table 4.

Output power of 9xx nm laser bar

9xx nm激光器巴条输出功率

year	wavelength/nm	output power/W	device type	spectral linewidth/nm	research group	reference
2010	975	10	DFB，second order grating	＜1	Ferdinand-Braun-Institut	[57]
2010	980	14	DBR，sixth order grating	＜1	Ferdinand-Braun-Institut	[58]
2012	976	11	DFB，eightieth-order grating	＜1	Ferdinand-Braun-Institut	[59]
2014	970	6	DFB，eightieth-order grating	＜0.7	Jonathan Decker	[60]
2017	975	5.5	DFB，second order grating	＜1	Mostallino	[61]
2019	980	10.7	DBR，sixth order grating	2.77	Qiao Chuang	[62]

Table 5.

Research progress of 9xx nm high-power narrow-linewidth semiconductor laser

9xx nm高功率窄谱宽半导体激光器研究进展

Xiaoyu Ma, Naling Zhang, Li Zhong, Suping Liu, Hongqi Jing. Research progress of high power semiconductor laser pump source[J]. High Power Laser and Particle Beams, 2020, 32(12): 121010

Download Citation

Tools

Save the article for my favorites

Paper Information