• Semiconductor Optoelectronics
  • Vol. 43, Issue 1, 137 (2022)
YU Shurui, WANG Ji, YANG Jikai, WANG Guozheng..., YANG Xue, NIE Decai and LI Siyuan|Show fewer author(s)
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    DOI: 10.16818/j.issn1001-5868.2021111704 Cite this Article
    YU Shurui, WANG Ji, YANG Jikai, WANG Guozheng, YANG Xue, NIE Decai, LI Siyuan. Preparation and Photoelectrochemical Properties of WO3/NiWO4 Composite Film[J]. Semiconductor Optoelectronics, 2022, 43(1): 137 Copy Citation Text show less

    Abstract

    A two-step hydrothermal method was applied to create WO3/NiWO4 composite films on conductive glass (FTO). The structure and morphology of WO3/NiWO4 composite films were characterized by XRD and SEM. The photoelectric properties of WO3/NiWO4 composite films were analyzed by UV-VIS, photocurrent test, photoelectrocatalytic test and AC impedance test. The analysis results indicate that the WO3/NiWO4 composite film has better light absorption characteristics, photocurrent density and photoelectrocatalysis activity than WO3 film, and the WO3/NiWO4 composite film with 3 hours hydrothermal reaction has the best photoelectrochemical properties. The photocurrent density of WO3/NiWO4-3h was 1.94mA/cm2 at 1.4V(vs. Ag/AgCl), and the photoelectrocatalytic efficiency of WO3/NiWO4-3h for methylene blue solution was 57.1% for 210min. The AC impedance diagram reveals that the charge transfer resistance of WO3/NiWO4 film is less than that of WO3 film, which corresponds to improved photoelectrochemical properties.
    YU Shurui, WANG Ji, YANG Jikai, WANG Guozheng, YANG Xue, NIE Decai, LI Siyuan. Preparation and Photoelectrochemical Properties of WO3/NiWO4 Composite Film[J]. Semiconductor Optoelectronics, 2022, 43(1): 137
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