A 2 μm Waveband InGaAsSb/AlGaAsSb Wide Stripe MQW Diode Laser

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 25 >Issue 12 >Page 1069 > Article

Chinese Journal of Lasers
Vol. 25, Issue 12, 1069 (1998)

A 2 μm Waveband InGaAsSb/AlGaAsSb Wide Stripe MQW Diode Laser

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. A 2 μm Waveband InGaAsSb/AlGaAsSb Wide Stripe MQW Diode Laser[J]. Chinese Journal of Lasers, 1998, 25(12): 1069 Copy Citation Text

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Abstract

The performance of a wide stripe InGaAsSb/AlGaAsSb MQW diode laser grown by MBE is reported. Output pulse power of the laser diode at room temperature is 83 mW, the threshold current is 250 mA, and the typical peak wavelength is about 2.00 μm.

Keywords

MBE growth quantum well material mid infared semiconductor laser

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