• Journal of Semiconductors
  • Vol. 40, Issue 7, 070203 (2019)
Feng Zheng
Author Affiliations
  • Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, China
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    DOI: 10.1088/1674-4926/40/7/070203 Cite this Article
    Feng Zheng. Giant spin injection into semiconductor and THz pulse emission[J]. Journal of Semiconductors, 2019, 40(7): 070203 Copy Citation Text show less

    Abstract

    PLASMONIC LASERS

    Perovskite plasmonic lasers capable of mode modulation

    Laser Photonics Rev., 2019, doi: 10.1002/lpor.201800306

    The plasmonic lasers can break down the diffraction limit of conventional optics to the deep subwavelength regime, thus the corresponding lasers have great potential applications in biological sensors, data storage, photolithography and optical communications. However, the mode modulation and ohmic losses are still the major problems that limiting the practical applications of the plasmonic lasers.

    Recently, Wang Group developed a new method to synthesize perovskite nanowires by utilizing an electrochemical growth of lead oxide film in the solution method. The as-grown perovskite (CH3NH3PbBr3) nanowires show a good growing repeatability and crystallinity. The according plasmonic lasers display a threshold of 62 μJ/cm2, narrow FWHM of 0.83 nm and high Q factor (Q ≈ 655). The fast lasing decay time can be short as 1.6 ps. To be more significantly, the plasmonic lasing modes can be effectively manipulated by adjusting the pumping energy. Such characteristics are distinct from traditional Fabry-Perot cavity modes. In addition to the composition engineering of the gain materials, the output behavior presents a remarkable freedom for manipulating the plasmonic lasing modes. In brief, these results open a new way for manipulating the output performances of plasmonic laser, and of significance in the applications of multiplexed on-chip photonic devices, biochemical sensors, ultrahigh density data storage and super-resolution imaging devices.

    Jingbi You (Institute of Semiconductors, CAS, Beijing, China)

    doi: 10.1088/1674-4926/40/7/070203

    References

    Feng Zheng. Giant spin injection into semiconductor and THz pulse emission[J]. Journal of Semiconductors, 2019, 40(7): 070203
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