Fabrication of 808 nm SQW Semiconductor Laser Facet AR HR Coating

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Photonica Sinica >Volume 34 >Issue 1 >Page 25 > Article

Acta Photonica Sinica
Vol. 34, Issue 1, 25 (2005)

Fabrication of 808 nm SQW Semiconductor Laser Facet AR HR Coating

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Fabrication of 808 nm SQW Semiconductor Laser Facet AR HR Coating[J]. Acta Photonica Sinica, 2005, 34(1): 25 Copy Citation Text

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Abstract

HfO 2/SiO 2 front and back facet coatings of 808 nm SQW semiconductor laser has been fabricated with Plasma Assisted Electron Beem Deposition (Plasma-Ion Assisted Deposition) method.Front AR coating reflectivity is as low as 12.2% and back HR coating is as high as 97.9%.The output power is improved 79%,external different quantum efficiency improved 80%.The output efficiency increased from 22.2% to 39.8% for 100 μm wide 1000 μm-cavity length device.

Keywords

AR coating Catastrophic optical damage HR coating Output efficiency Plasma assisted electron beem deposition Semiconductor laser

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