• Semiconductor Optoelectronics
  • Vol. 42, Issue 6, 875 (2021)
ZHANG Ruixin, SUN Hui, CHENG Jia, LIU Zitong..., CHEN Jianjin and SHEN Longhai|Show fewer author(s)
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    DOI: 10.16818/j.issn1001-5868.2021100201 Cite this Article
    ZHANG Ruixin, SUN Hui, CHENG Jia, LIU Zitong, CHEN Jianjin, SHEN Longhai. Effect of Sputtering Pressure on Optical Properties of Ga2O3 Films Prepared by RF Magnetron Sputtering[J]. Semiconductor Optoelectronics, 2021, 42(6): 875 Copy Citation Text show less
    References

    [1] Pearton S J, Yang J, Cary P H, et al. A review of Ga2O3 materials, processing, and devices[J]. Appl. Phys. Rev., 2018, 5(1): 011301.

    [2] Jiao S, Lu H, Wang X, et al. The structural and photoelectrical properties of gallium oxide thin film grown by radio frequency magnetron sputtering[J]. ECS J. of Solid State Science & Technol., 2019, 8(7): Q3086-Q3090.

    [3] Han S, Huang X, Fang M, et al. High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering[J]. 2019, 38(7): 11834-11844.

    [4] Gan K J, Liu P T, Chien T C, et al. Highly durable and flexible gallium-based oxide conductive-bridging random access memory[J]. Scientific Reports, 2019, 9(1): 1-7.

    [5] Sui Y, Liang H, Chen Q, et al. Room-temperature ozone sensing capability of IGZO-decorated amorphous Ga2O3 films[J]. ACS Appl. Mater. & Interfaces, 2020, 12(7): 8929-8934.

    [6] Liang H, Cui S, Su R, et al. Flexible X-ray detectors based on amorphous Ga2O3 thin films[J]. ACS Photon., 2018, 6(2): 351-359.

    [7] Ou Sin-Liang, Wuu D S, Fu Y C, et al. Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition[J]. Materials Chemistry and Phys., 2012, 133(2/3): 700-705.

    [8] Chen C C, Chen C C. Morphology and electrical properties of pure and Ti-doped gas-sensitive Ga2O3 film prepared by rheotaxial growth and thermal oxidation[J]. J. of Materials Research, 2004, 19(4): 1105-1117.

    [9] Shen H, Yin Y, Tian K, et al. Growth and characterization of β-Ga2O3 thin films by sol-gel method for fast-response solar-blind ultraviolet photodetectors[J]. J. of Alloys and Compounds, 2018, 766(10): 601-608.

    [10] Aida R, Minami K, Ishibashi K, et al. Effect of post-deposition annealing on structural and optical properties of RF magnetron sputtered β-Ga2O3 films[J]. AIP Conf. Proceedings, 2014, 1583(1): 1583.

    [11] Dong L, Jia R, Xin B, et al. Effects of post-annealing temperature and oxygen concentration during sputtering on the structural and optical properties of β-Ga2O3 films[J]. J. of Vacuum Science & Technol. A: Vacuum Surfaces and Films, 2016, 34(6): 060602.

    [12] Ramana C V, Rubio E J, Barraza C D, et al. Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films[J]. J. of Appl. Phys., 2014, 115(4): 4166.

    ZHANG Ruixin, SUN Hui, CHENG Jia, LIU Zitong, CHEN Jianjin, SHEN Longhai. Effect of Sputtering Pressure on Optical Properties of Ga2O3 Films Prepared by RF Magnetron Sputtering[J]. Semiconductor Optoelectronics, 2021, 42(6): 875
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