The structure and principles of the uniform scattering waveguide multilayer memory are introduced. To read the information in the waveguide multilayer memory, an optoelectronic detector is used to detect the scattering beams emitted from the information dots on the waveguide surface. But the scattering light intensity distribution on the waveguide multilayer memory surface is not uniform which leads to low signal to noise ratio (SNR). Uniform scattering waveguide multilayer memory can cover this defect by changing the information dots depths in each position. It has been proved that one of the methods to realize the uniform scattering is to change the depths of the information dots in each position. And a function about the depths distribution of information dots is deduced in the paper. Furthermore, experimental setup is designed to prove the feasibility of the theories above, An experimental storage device is fabricated and some good experimental results are demonstrated , including two photos contrasting the performance of the uniform scattering waveguide multilayer memory with that of the ordinary waveguide multilayer memory.