• Journal of Infrared and Millimeter Waves
  • Vol. 36, Issue 4, 385 (2017)
LI Qing1、2, BAI Jie1, LV Yan-Qiu3, HU Wei-Da1, CHEN Xiao-Shuang1, and LU Wei1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.11972/j.issn.1001-9014.2017.04.001 Cite this Article
    LI Qing, BAI Jie, LV Yan-Qiu, HU Wei-Da, CHEN Xiao-Shuang, LU Wei. Analysis of ultraviolet and infrared dual-color focal-plane array detector based on Pt/CdS and InSb junctions[J]. Journal of Infrared and Millimeter Waves, 2017, 36(4): 385 Copy Citation Text show less

    Abstract

    Based on finite difference time domain method (FDTD) and finite element method (FEM), the mechanism of Pt/CdS and InSb ultraviolet-infrared dual-color focal-plane arrays was investigated. It was found that a high ultraviolet photo response can be achieved for Pt/CdS Schottky junction under an ultrathin Pt top contact. Further simulations show that the ultrathin top contact can efficiently couple the infrared radiation for the dual-color focal-plane array detector. The center to center spacing of each pixel of 50 μm in the ultraviolet and infrared dual-color focal-plane array detector based on Pt/CdS and InSb junctions can significantly reduce crosstalk. Our work provides fundamental guidance for optimization and design of ultraviolet and infrared dual-color detector.
    LI Qing, BAI Jie, LV Yan-Qiu, HU Wei-Da, CHEN Xiao-Shuang, LU Wei. Analysis of ultraviolet and infrared dual-color focal-plane array detector based on Pt/CdS and InSb junctions[J]. Journal of Infrared and Millimeter Waves, 2017, 36(4): 385
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