• Infrared Technology
  • Vol. 44, Issue 2, 123 (2022)
Qin HAN1、2、*, Kaicong GAO1, Siwei REN3, Jun WU1, Ying JIANG4, Ruiguang ZHAO1, and Jun SHEN1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
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    DOI: Cite this Article
    HAN Qin, GAO Kaicong, REN Siwei, WU Jun, JIANG Ying, ZHAO Ruiguang, SHEN Jun. Comparative Study on Readout Circuit for Graphene and Typical Photoconductors Photodetectors[J]. Infrared Technology, 2022, 44(2): 123 Copy Citation Text show less
    References

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    [3] YANG Q, WU Q M, LUO W, et al. InGaAs/graphene infrared photodetectors with enhanced responsivity[J]. Materials Research Express, 2019, 6(11): 116208.

    [4] FANG H, HU W. Photogating in low dimensional photodetectors[J]. Advanced Science, 2017, 4(12): 1700323.

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    [7] WANG F, WANG Z X, YIN L, et al. 2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection[J]. Chemical Society Reviews, 2018, 47(16): 6296-6341.

    [8] Lee I, KANG W T, Kim J E, et al. Photoinduced tuning of schottky barrier height in Graphene/MoS2 heterojunction for ultrahigh performance short channel phototransistor[J]. ACS Nano, 2020, 14(6): 7574-7580.

    [9] Gerasimos K, Michela Badioli, Louis Gaudreau, et al. Hybrid graphene-quantum dot phototransistors with ultrahigh gain[J]. Nature Nanotechnology, 2012, 7(6): 363-368.

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    [11] Ryzhii V, Ryzhii M. Graphene bilayer field-effect phototransistor for terahertz and infrared detection[J]. Physical Review B, 2009, 79(24): 245311.

    [14] XIE C, WANG Y, ZHANG Z X, et al. Graphene/semiconductor hybrid heterostructures for optoelectronic device applications[J]. Nano Today, 2018, 19: 41-83.

    HAN Qin, GAO Kaicong, REN Siwei, WU Jun, JIANG Ying, ZHAO Ruiguang, SHEN Jun. Comparative Study on Readout Circuit for Graphene and Typical Photoconductors Photodetectors[J]. Infrared Technology, 2022, 44(2): 123
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