of High-Quality 5-inch InSb Single Crystal

Tao DONG; Chao ZHAO; Zhi-qiang PENG; Wei-lin SHE; Li-jun HE; Zhen-xing LI

doi:10.3969/j.issn.1672-8785.2023.10.002

Journals >INFRARED >Volume 44 >Issue 10 >Page 10 > Article

INFRARED
Vol. 44, Issue 10, 10 (2023)

of High-Quality 5-inch InSb Single Crystal

Tao DONG, Chao ZHAO, Zhi-qiang PENG, Wei-lin SHE, Li-jun HE, and Zhen-xing LI

Author Affiliations

[in Chinese]

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DOI: 10.3969/j.issn.1672-8785.2023.10.002 Cite this Article

DONG Tao, ZHAO Chao, PENG Zhi-qiang, SHE Wei-lin, HE Li-jun, LI Zhen-xing. of High-Quality 5-inch InSb Single Crystal[J]. INFRARED, 2023, 44(10): 10 Copy Citation Text

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References

[4] Simchi H, Bahreani S, Saani M H. Cleaning InSb Wafers for Manufacturing InSb Detectors \[J\]. The European Physical Journal Applied Physics, 2006, 33: 1-4.

[5] Burton J A, Prim R C, Slichter W P. The Distribution of Solute in Crystals Grown from the Melt. Part I. Theoretical \[J\]. Journal of Chemical Physics, 1953, 21(11): 1987-1991.

[6] Levan P D, Sood A K, Wijewarnasuriya P, et al. Interface and Facet Control During Czochralski Growth of (111) InSb Crystals for Cost Reduction and Yield Improvement of IR Focal Plane Array Substrates \[C\]. SPIE, 2014, 9220: 922003.

[7] Wu X L, Zhang K F, Huang Y M, et al. Recombination Lifetime Characterization and Mapping of p-i-n In P/In0.53Ga0.47As/InP Mesa Structure Using the Microwave Photoconductivity Decay (-PCD) Technique \[C\]. SPIE, 2008, 6221: 66211C.

[8] Martinez B, Flint J P, Dallas G, et al. Standardizing Large Format 5″ GaSb and InSb Substrate Production \[C\]. SPIE, 2017, 10177: 101772L.

DONG Tao, ZHAO Chao, PENG Zhi-qiang, SHE Wei-lin, HE Li-jun, LI Zhen-xing. of High-Quality 5-inch InSb Single Crystal[J]. INFRARED, 2023, 44(10): 10

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