Organic photomultiplier detector with high trap concentration is developed by double doping method. By keeping the optimal doping ratio of C₆₀ unchanged （1.0 wt%） based on the optimized single-doped device （active layer is P3HT：PC₆₁BM：C₆₀）， while doping both C₆₀ and DDQ electron traps， the effects of different DDQ doping concentrations on the trap concentration of the P3HT：PC₆₁BM active layer and the photoelectric performance of the detector are studied.The study shows that the maximum doping concentration of the double-doped C₆₀：DDQ active layer was 1.5 wt%， which is about 1.5 times higher than that of the single-doped C₆₀ active layer （maximum doping concentration is 1.0 wt%）. The trap concentration of the double-doped C₆₀：DDQ device is 2.02×10¹⁸ cm^-3， which is about 3.5 times higher than that of the single-doped C₆₀ device （trap concentration is 5.83×10¹⁷ cm^-3）. Under the bias voltage of $-$2 V， the external quantum efficiency of the double-doped C₆₀：DDQ device is as high as 2015.32%， which is about 10 times higher than that of the single-doped C₆₀ device （external quantum efficiency is 202.60%）. The results show that the double doping method can greatly increase the trap concentration， so as to realize the high concentration trap doping of the active layer.