Electrical Control of Photoluminescence Spectrum of Monolayer MoS2

WANG Ya-li; LIN Zi-yuan; CHAI Yang; WANG Sheng

doi:10.3788/gzxb20164507.0730001

[1] GANATRA R, ZHANG Qing. Few-layer MoS2: A promising layered semiconductor［J］. ACS Nano, 2014, 8(5): 4074-4099.

[2] RADISAVLJEVIC B, RADENOVIC A, BRIVIO J, et al. Single-layer MoS2 transistors［J］. Nature Nanotechnology, 2011, 6(3): 147-150.

[3] MAK F, LEE C, HONE J, et al. Atomically thin MoS2: A new direct-gap semiconductor［J］. Physical Review Letters, 2010, 105(13): 136805.

[4] YOON Y, GANAPATHI K, SALAHUDDIN S. How good can monolayer MoS2 transistors be ［J］. Nano Letters, 2011, 11(9): 3768-3773.

[5] SPLENDIANI A, SUN Liang, ZHANG Yuan-bo, et al. Emerging photoluminescence in monolayer MoS2［J］. Nano Letters, 2010, 10(4): 1271-1275.

[6] YIN Zong-you, LI Hai, LI Hong, et al. Single-layer MoS2 Phototransistors［J］. ACS Nano, 2011, 6(1): 74-80.

[7] LOPEZ-SANCHEZ O, LEMBKE D, KAYCI M, et al. Ultrasensitive photodetectors based on monolayer MoS2［J］. Nature Nanotechnology, 2013, 8(7): 497-501.

[8] SUNDARAM S, ENGEL M, LOMBARDO A, et al. Electroluminescence in single layer MoS2［J］. Nano Letters, 2013, 13(4): 1416-1421.

[9] YE Yu, YE Zi-liang, GHARGHI M, et al. Exciton-related electroluminescence from monolayer MoS2［C］. CLEO: Science and Innovations. Optical Society of America, 2014: STh4B. 4.

[10] FONTANA M, DEPPE T, BOYD A, et al. Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions［J］. Scientific Reports, 2013, 3(15):1634-1634.

[11] TSAI L, SU Sheng-han, CHANG Jan-kai, et al. Monolayer MoS2 heterojunction solar cells［J］. ACS Nano, 2014, 8(8): 8317-8322.

[12] MAK F, HE Ke-liang, SHAN Jie, et al. Control of valley polarization in monolayer MoS2 by optical helicity［J］. Nature Nanotechnology, 2012, 7(8): 494-498.

[13] LEBEGUE S, ERIKSSON O. Electronic structure of two-dimensional crystals from ab initio theory［J］. Physical Review B, 2009, 79(11): 115409.

[14] RAMASUBRAMANIAM A. Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides［J］. Physical Review B, 2012, 86(11): 115409.

[15] QIU D, FELIPE H, LOUIE S. Optical spectrum of MoS2: many-body effects and diversity of exciton states［J］. Physical Review Letters, 2013, 111(21): 216805.

[16] BERKELBACH C, HYBERTSEN S, REICHMAN R. Theory of neutral and charged excitons in monolayer transition metal dichalcogenides［J］. Physical Review B, 2013, 88(4): 045318.

[17] ZHANG Chang-jian, WANG Hai-ning, CHAN Wei-min, et al. Absorption of light by excitons and trions in monolayers of metal dichalcogenide MoS2: Experiments and theory［J］. Physical Review B, 2014, 89(20): 205436.

[18] MAK F, HE K, LEE C, et al. Tightly bound trions in monolayer MoS2［J］. Nature Materials, 2013, 12(3): 207-211.

[19] MOURI S, MIYAUCHI Y, MATSUDA K. Tunable photoluminescence of monolayer MoS2 via chemical doping［J］. Nano Letters, 2013, 13(12): 5944-5948.

[20] LI Zi-wei, YE Ru-quan, FENG Rui, et al. Graphene quantum dots doping of MoS2 monolayers［J］. Advanced Materials, 2015, 27(35): 5235-5240.

[21] KANG Yi-min, GONG Yong-ji, HU Zhi-jian, et al. Plasmonic hot electron enhanced MoS2 photocatalysis in hydrogen evolution［J］. Nanoscale, 2015, 7(10): 4482-4488.

[22] LIN Zi-yuan, ZHAO Yu-da, ZHOU Chang-jian, et al. Controllable growth of large–size crystalline MoS2 and resist-free transfer assisted with a Cu thin film［J］. Scientific Reports, 2015, 5:18596.

[23] WU Wei, DE D, CHANG Su-chi, et al. High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains［J］. Applied Physics Letters, 2013, 102(14): 142106.

[24] LI Hong, ZHANG Qing, YAP C, et al. From bulk to monolayer MoS2: Evolution of Raman scattering［J］. Advanced Functional Materials, 2012, 22(7): 1385-1390.

[25] LEE Chang-gu, YAN Hu-gen, BRUS E, et al. Anomalous lattice vibrations of single-and few-layer MoS2［J］. ACS Nano, 2010, 4(5): 2695-2700.

[26] POPOV I, SEIFERT G, TOMáNEK D. Designing electrical contacts to MoS2 monolayers: A computational study［J］. Physical Review Letters, 2012, 108(15): 156802.

[27] DAS S, CHEN Hong-yan, PENUMATCHA A, et al. High performance multilayer MoS2 transistors with scandium contacts［J］. Nano Letters, 2012, 13(1): 100-105.