Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs/GaAs quantum well structure

Yan Jia; Qingnan Yu; Fang Li; Mingqing Wang; Wei Lu; Jian Zhang; Xing Zhang; Yongqiang Ning; Jian Wu

doi:10.3788/COL201816.011402

Journals >Chinese Optics Letters >Volume 16 >Issue 1 >Page 011402 > Article

Chinese Optics Letters
Vol. 16, Issue 1, 011402 (2018)

Experimental investigation of loss and gain characteristics of an abnormal In_xGa_1-xAs/GaAs quantum well structure

Yan Jia¹, Qingnan Yu¹, Fang Li¹, Mingqing Wang¹, Wei Lu¹, Jian Zhang², Xing Zhang², Yongqiang Ning², and Jian Wu^1、*

Author Affiliations

¹Department of Applied Physics, Beihang University, Beijing 100191, China

²State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130000, China

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DOI: 10.3788/COL201816.011402 Cite this Article Set citation alerts

Yan Jia, Qingnan Yu, Fang Li, Mingqing Wang, Wei Lu, Jian Zhang, Xing Zhang, Yongqiang Ning, Jian Wu. Experimental investigation of loss and gain characteristics of an abnormal In_xGa_1-xAs/GaAs quantum well structure[J]. Chinese Optics Letters, 2018, 16(1): 011402 Copy Citation Text

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