Fabrication of narrow pulse passively Q-switched selfstimulated Raman laser with c-cut Nd:GdVO4

Gao SHEN; Zuo-han LI; Ming HAN

doi:10.1007/s11801-016-6191-2

Journals >Optoelectronics Letters >Volume 12 >Issue 6 >Page 430 > Article

Optoelectronics Letters
Vol. 12, Issue 6, 430 (2016)

Fabrication of narrow pulse passively Q-switched selfstimulated Raman laser with c-cut Nd:GdVO₄

Gao SHEN^1、*, Zuo-han LI², and Ming HAN²

Author Affiliations

¹Center for Medical Device Evaluation, China Food and Drug Administration, Beijing 100044, China

²Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Laser, School of Science, Beijing Jiaotong University, Beijing 100044, China

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DOI: 10.1007/s11801-016-6191-2 Cite this Article

SHEN Gao, LI Zuo-han, HAN Ming. Fabrication of narrow pulse passively Q-switched selfstimulated Raman laser with c-cut Nd:GdVO₄[J]. Optoelectronics Letters, 2016, 12(6): 430 Copy Citation Text

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Abstract

Combining the self-stimulated Raman scattering technology and saturable absorber of Cr⁴⁺:YAG, a 1.17 μm c-cut Nd:GdVO₄picosecond Q-switched laser is demonstrated in this paper. With an incident pump power of 10 W, the Q-switched laser with average power of 430 mW for 1.17 μm, pulse width of 270 ps, repetition rate of 13 kHz and the first order Stokes conversion efficiency of 4.3% is obtained. The Q-switched pulse width can be the narrowest in our research. In addition, the yellow laser at 0.58 μm is also achieved by using the LiB3O5 frequency doubling crystal.

SHEN Gao, LI Zuo-han, HAN Ming. Fabrication of narrow pulse passively Q-switched selfstimulated Raman laser with c-cut Nd:GdVO₄[J]. Optoelectronics Letters, 2016, 12(6): 430

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