Fig. 1. (a) Device structure of PeLEDs; (b) schematic energy level diagram of PeLEDs.(a) PeLEDs的器件结构; (b) PeLEDs的能级图

Fig. 2. EL performance of PeLEDs: (a) Current density-voltage (J-V); (b) luminance-voltage (L-V); (c) current-efficiency-voltage-external quantum efficiency (CE-V-EQE); (d) EL spectra of PeLEDs with 5 mg/mL TAPC at different applied voltages; the inset is normalized EL spectra of PeLEDs with different concentrations of TAPC at the same applied voltage of 5 V. PeLEDs的EL性能表征　(a)电流密度-电压; (b)亮度-电压; (c)电流效率-电压-外量子效率; (d) PeLEDs (TAPC浓度为5 mg/mL)在不同电压下的EL光谱, 内插图是不同TAPC浓度的PeLEDs在电压为5 V时的归一化EL谱

Fig. 3. The EL stability of PeLEDs.PeLEDs的稳定性表征

Fig. 4. SEM images of (a) ITO/PEDOT:PSS/CsPbBr₃ and (b) ITO/PEDOT:PSS/TAPC/CsPbBr₃; the size distribution of CsPbBr₃ grain on (c) ITO/PEDOT:PSS/CsPbBr₃ and (d) ITO/PEDOT:PSS/TAPC/CsPbBr₃. (a) ITO/PEDOT:PSS/CsPbBr₃和(b) ITO/PEDOT:PSS/TAPC/CsPbBr₃样品的SEM图; (c) ITO/PEDOT:PSS/CsPbBr₃和(d) ITO/PEDOT:PSS/TAPC/CsPbBr₃样品的CsPbBr₃颗粒尺寸统计分布

Fig. 5. Characteristics of CsPbBr₃ film on PEDOT:PSS and PEDOT:PSS/TAPC: (a) XRD; (b) absorption, and the inset is a large image of normalized PL spectra from 500 to 518 nm; (c) normalized PL spectra, and the inset is a large image of normalized PL spectra from 520 to 535 nm; (d) TRPL decay curves. 在PEDOT:PSS和PEDOT:PSS/TAPC衬底上的CsPbBr₃薄膜的表征　(a)晶体结构(XRD); (b)紫外吸收, 内插图是在500−518 nm波长范围吸收的放大图; (c) PL光谱, 内插图是在520−535 nm波长范围PL的放大图; (d) TRPL曲线

Fig. 6. Current density-voltage characteristics of hole-dominated devices.单空穴器件的电流密度-电压特性曲线

Fig. 7. Exciton recombination interface effects: (a) PEDOT: PSS/TAPC/CsPbBr₃; (b) PEDOT:PSS/CsPbBr₃. 激子界面复合效应　(a) PEDOT:PSS/CsPbBr₃; (b) PEDOT:PSS/TAPC/CsPbBr₃