The polished P-type single crystalline silicon wafer deposited with tellurium film is scanned by femtosecond laser. Tellurium is doped in silicon as N-type dopant. The doped layer is irradiated by 248 nm, 30 ns excimer laser for annealing. Single crystalline silicon doped with tellurium is prepared. Silicon photodiode detectors with high response at room temperature are fabricated using the doped single crystalline silicon. At -4 V reverse bias voltage, the response is 0.86 A/W near 1000 nm, and the external quantum efficiency is larger than 106.6%. By increasing the reverse bias voltage, the response increases, the cutoff wavelength extends to infrared direction. At -8 V reverse bias voltage, the cutoff wavelength extends to 1235 nm. The maximum response is 3.27 A/W at 1080 nm with -16 V reverse bias.