[1] KUZNETSOV M,HAKIMI F,SPRAGUE R,et al. High power (＞0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams [J].IEEE Photon. Technol. Lett., 1997,9:1063-1065.

[2] KUNETSOV F,HAKIMI F,SPRAGUE R. Design and characteristics of high-power (＞0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams[J]. IEEE J. Sel, Top, Quantum Electron ,1999,5(3) :561-573.

[3] GARNACHE A,KACHANOV A A,STOECKEL F. Diode-pumped broadband vertical-externalcavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy[J]. J. Opt. Soc. Am. B. , 2000,17 (9): 1589-1598.

[4] ZAYHOWSKI J J, MOORADIAN A. Single-frequency microchip ND lasers[J]. Opt. Lett.,1989,14:24-26.

[5] ZAKHARIAN A R, HADER J, MOLONEY J V,et al. Experimental and theoretical analysis of optically pumped semiconductor disk lasers[J]. Appl. Phys. lett. ,2003,83:1313-1315.

[7] CORZINE S W,GEELS R S,SCOTT J W,et al. Design of fabry-perot surface-emitting lasers with a periodic gain structure[J]. IEEE J. Quantum Electron. ,1989,25: 1513-1524.

[9] ALFORD J,RAYMOND T D,ALLERMAN A A. High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser[J]. J. Opt. Soc. Am. B. , 2002,19 (4):663-666.

[10] SANDUSKY J V,BRUECK S R J. A cw external-cavity surface-emitting laser[J]. IEEE Photonics Technology Lett. , 1996,8: 313-315.

[11] YAN C,QIN L,ZHANG S. Design and calculation characteristics of a novel diode-pumped long wavelength vertical-cavity surface-emitting semiconductor laser[J].SPIE,2004,5280: 15-21.