[1] Feinleib J, DeNeufville J, Moss S C,et al.Rapid reversible light-induced crystallization of amorphous semiconductors.Appl Phys Lett, 1971,18(6):254~257
[2] Chen M, Rubin K A, Marello V,et al. Reversibility and stability of tellurium alloys for optical data storage application.Appl Phys Lett, 1985,46(8):734~736
[7] Di Giulio M, Micocci G, Rella R, et al.Optical absorption of tellurium suboxide thin films.Phys Stat Sol (a), 1984,136:K101~K105
[8] Hafiz M M,Moharram A H,Abu-Sehly A A. Characterization of (As.Te)1-xSex thin films.Appl Phys(A),1998,66(2):217~221
[9] Lee C M,Chin T S,Huang E Y. Optical properties and structure of tellurium-germanium-bismuth-antimony compounds with fast phase-change capability.J Appl Phys, 2001,89(6): 3290~3294
[10] Yao H B,Shi L P,Chong T C,et al.Optical transition of chalcogenide phase-change thin films.Jpn J Appl Phys, 2003,42(2B):828~831
[11] Hafiz M M,Abdel-Rahim M A,Abu-Sehly A A. Optical absorption and electrical conductivity of amorphous AsTeGe thin films.Physica(B), 1998,252(3): 207~215
[12] Maan A S,Goyal D R,Sharma G P,et al.Optical absorption properties of amorphous Ga-Se-Te alloys.J Non-Cryst Solids, 1995,183(2):186~190
[13] Shabalov A L,Feldman M S. Optical properties of thin GeOx films.Phys Stat Sol (a),1984,83:K11~K14