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    Journals >Journal of Semiconductors

    Articles
    Visible-to-near-infrared photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures with a fast response speed and high normalized detectivity
    Visible-to-near-infrared photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures with a fast response speed and high normalized detectivity
    Xinfa Zhu, Weishuai Duan, Xiancheng Meng, Xiyu Jia, Yonghui Zhang, Pengyu Zhou, Mengjun Wang, Hongxing Zheng, and Chao Fan
    Journal of Semiconductors
    • Apr. 24, 2024
    • Vol. 45, Issue 3 (2024)
    Articles
    GHz photon-number resolving detection with high detection efficiency and low noise by ultra-narrowband interference circuits
    GHz photon-number resolving detection with high detection efficiency and low noise by ultra-narrowband interference circuits
    Tingting Shi, Yuanbin Fan, Zhengyu Yan, Lai Zhou, Yang Ji, and Zhiliang Yuan
    Journal of Semiconductors
    • Apr. 24, 2024
    • Vol. 45, Issue 3 (2024)
    Articles
    Behavior of exciton in direct−indirect band gap AlxGa1−xAs crystal lattice quantum wells
    Behavior of exciton in direct−indirect band gap AlxGa1−xAs crystal lattice quantum wells
    Yong Sun, Wei Zhang, Shuang Han, Ran An, Xin-Sheng Tang, Xin-Lei Yu, Xiu-Juan Miao, Xin-Jun Ma, Xianglian, Pei-Fang Li, Cui-Lan Zhao, Zhao-Hua Ding, and Jing-Lin Xiao
    Journal of Semiconductors
    • Apr. 24, 2024
    • Vol. 45, Issue 3 (2024)
    Articles
    Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy
    Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy
    Jin Sui, Jiaxiang Chen, Haolan Qu, Yu Zhang, Xing Lu, and Xinbo Zou
    Journal of Semiconductors
    • Apr. 24, 2024
    • Vol. 45, Issue 3 (2024)
    Articles
    A novel one-time-programmable memory unit based on Schottky-type p-GaN diode
    A novel one-time-programmable memory unit based on Schottky-type p-GaN diode
    Chao Feng, Xinyue Dai, Qimeng Jiang, Sen Huang, Jie Fan, Xinhua Wang, and Xinyu Liu
    Journal of Semiconductors
    • Apr. 24, 2024
    • Vol. 45, Issue 3 (2024)
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    A review on GaN HEMTs: nonlinear mechanisms and improvement methods
    Chenglin Du, Ran Ye, Xiaolong Cai, Xiangyang Duan, Haijun Liu, Yu Zhang, Gang Qiu, and Minhan Mi
    • Journal of Semiconductors
    • Vol. 44, Issue 12, 121801 (2023)
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    Fundamentals and applications of photonic waveguides with bound states in the continuum
    Zejie Yu, He Gao, Yi Wang, Yue Yu, Hon Ki Tsang, Xiankai Sun, and Daoxin Dai
    • Journal of Semiconductors
    • Vol. 44, Issue 10, 101301 (2023)
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    The measurement of responsivity of infrared photodetectors using a cavity blackbody
    Nong Li, Dongwei Jiang, Guowei Wang, Weiqiang Chen, Wenguang Zhou, Junkai Jiang, Faran Chang, Hongyue Hao, Donghai Wu, Yingqiang Xu, Guiying Shen, Hui Xie, Jingming Liu, Youwen Zhao, Fenghua Wang, and Zhichuan Niu
    • Journal of Semiconductors
    • Vol. 44, Issue 10, 102301 (2023)
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    Beyond convolutional neural networks computing: New trends on ISSCC 2023 machine learning chips
    Chen Mu, Jiapei Zheng, and Chixiao Chen
    • Journal of Semiconductors
    • Vol. 44, Issue 5, 050203 (2023)
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    Defects in perovskite crystals
    Zhimin Fang, Jie Sun, Shengzhong (Frank) Liu, and Liming Ding
    • Journal of Semiconductors
    • Vol. 44, Issue 8, 080201 (2023)
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    Recent advances in NiO/Ga2O3 heterojunctions for power electronics
    Xing Lu, Yuxin Deng, Yanli Pei, Zimin Chen, and Gang Wang
    • Journal of Semiconductors
    • Vol. 44, Issue 6, 061802 (2023)
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