980 nm and 830 nm semiconductor lasers were used as the pump source to excite Bismuth/Erbium co-doped optical fiber respectively, and the amplified spontaneous emission spectrum properties of forward and backward pump methods were analyzed. Experimental results show that the fluorescence intensity is significantly enhanced with increasing of the pumping power. By using 980 nm semiconductor laser, there are two obvious emission bands with the central wavelengths at 1 142 nm and 1 536 nm with the forward pump. The 3 dB bandwidth with the center of 1 142 nm is 141 nm and, the 3 dB bandwidth with the center of 1 536 nm is 29 nm. Using 830 nm semiconductor laser, the forward pump mode can excite the fluorescence spectrum with 1 421 nm as the center, and the 3 dB bandwidth is 447 nm. When 980 nm and 830 nm semiconductor lasers pumped Bismuth/Erbium co-doped optical fiber forward respectively, luminescence intensity firstly increased and then decreased. When 980 nm and 830 nm semiconductor lasers pumped Bismuth/Erbium co-doped optical fiber backward respectively, luminescence intensity firstly increased and then remained stable. In the temperature range of 25~80℃, the fluorescence intensity of Bismuth/Erbium co-doped optical fiber is almost unaffected by the temperature. Using 980 nm and 830 nm semiconductor lasers to excited Bismuth/Erbium co-doped optical fiber at the same time, it is proved that the Bismuth activity centers are independent, and there is some overlap in the luminescence range.