Based on device simulation, an epitaxy structure with silicon doped base of a PNP InGaAsP-InP MQW transistor laser (HBTL) at 1 550 nm is designed and realized by MOCVD. Due to its much smaller diffusion coefficient and shorter diffusion length compared to the P dopant in the NPN HBTL, silicon as N dopant in the base perform with higher stability. Therefore, the active material with higher optical quality of PNP HBTL can be obtained easier than that of NPN HBTL. In addition, B type Ohmic contact can be realized easier than P type. The N doping density can be reduced compared to NPN HBTL benefiting to reducing both the optical loss and carrier recombination in the base. And therefore, both the lower threshold and higher stimulation power of the HBTL can be obtained. The result of PL spectrum measurement of the epitaxied material shows high peak intensity and as narrow as 65.1 nm FWHM which demonstrates good optical quality of the material.